Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1985-1989  (4)
Source
Material
Years
Year
Keywords
  • 1
    Electronic Resource
    Electronic Resource
    Mössbauer spectroscopy of Sn-doped GaAs grown by metalorganic vapor-phase epitaxy (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1739-1744 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs epitaxial layers, doped with 119Sn-enriched tin, have been grown by metalorganic vapor-phase epitaxy (MOVPE). 119Sn Mössbauer spectroscopy and Hall measurements have been used to characterize the layers. Three tin species are observed in the as-grown material. One of these is identified as the SnGa shallow donor site and another is associated with electrically inactive Sn sites that may be SnGaSnAs pairs or Sn3As2-like clusters or microprecipitates. The free carrier concentrations (Nd−Na) obtained from the Hall data agree quantitatively with the concentrations of SnGa sites from the Mössbauer data for samples prepared with MOVPE Sn/Ga ratios up to 0.02 and Nd−Na 〈6×1018 cm−3, thereby showing no evidence for compensation up to this doping level. Annealing under arsine creates an acceptor species which is identified as SnGaVGa. High-energy electron irradiation may also produce this compensating acceptor species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339603
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Shallow and deep donors in n-type Ga1−xAlxAsB: Sn grown by metalorganic vapor-phase epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4518-4523 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic properties of Sn, a well-known group IV n-type dopant in GaAs, were studied in Ga1−xAlxAs alloys for the whole compositional range. These Sn-doped Ga1−xAlxAs epitaxial layers were grown by metalorganic vapor-phase epitaxy; Hall measurements were carried out for values ranging from x=0 to 1, Hall data for 0〈x〈0.4 were interpreted assuming a shallow donor bound to the Γ band, and a deep donor with an ionization energy of about 100 meV. Photoluminescence spectra of selectivity excited donor acceptor pairs show the existence of a deep donor at 100 meV below the Γ minimum for x〉0.2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340149
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Effective masses in Sn-doped Ga1−xAlxAs (x〈0.33) determined by the Shubnikov–de Haas effect (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 3481-3484 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first direct effective mass measurements of electrons in metalorganic vapor phase epitaxy (MOVPE) Sn-doped Ga1−xAlxAs (x〈0.33) epilayers from Shubnikov–de Haas (SdH) oscillations are reported. The m@B|eΓ values of the conduction band were obtained up to x=0.3. These data, corrected for nonparabolicity, were compared to values calculated by the k ⋅ p model, taking into account the disorder bowing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335771
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    A hydroxyketone-diamine poly schiff base and its polymeric chelates (1985)
    Weinheim : Wiley-Blackwell
    Angewandte Makromolekulare Chemie 132 (1985), S. 61-68 
    Details
    ISSN: 0003-3146
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Description / Table of Contents: Es werden die Herstellung eines Polyazomethins (PSB) durch Kondensation von 4,4′-Dihydroxy-3,3′-dibenzylbiphenyl mit 4,4′-Diaminodiphenylmethan sowie seiner Polychelate beschrieben. PSB wirkt als vierzähliger Ligand. Eine Struktur der Polymeren wird vorgeschlagen. Alle Polychelate außer diejenigen mit Zn(II) als Metall sind paramagnetische, dunkel gefärbte, pulvrige Feststoffe, die unlöslich in gebräuchlichen organischen Lösungsmitteln sind.
    Notes: The preparations of a poly(azomethine) (PSB) via condensation of 4,4′-dihydroxy-3,3′-dibenzylbiphenyl with 4,4′-diaminodiphenylmethane and its polychelates are described. PSB acts as a tetradentate ligand. A structure of the polymers is proposed. All the polychelates except those with Zn(II) as metal are paramagnetic, dark colored powdery solids which are insoluble in common organic solvents.
    Additional Material: 2 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/apmc.1985.051320105
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...