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  • 1985-1989  (27)
  • 1
    Electronic Resource
    Electronic Resource
    Novel photovoltaic δ-doped GaAs superlattice structure (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2247-2249 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An asymmetric δ-doped GaAs structure is described which exhibits novel photovoltaic effects and low-intensity nonlinear optics. Of particular interest in this kind of structure is the ability to design the electro-optical and nonlinear optical properties and the material response time over a wide range by appropriate design of the doping profile.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101138
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Photorefractive imaging of semiconductor wafers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1083-1085 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Making use of the photorefractive effect, we have developed a versatile method of imaging various crystal properties of semi-insulating compound semiconductors. The magnitude and time evolution of refractive index gratings are monitored via diffraction. The observed diffraction is directly related to the electric fields present, and quantitative information concerning the spatial variation of dark conductivity, photoconductivity, and deep level absorption can be extracted. Wafers of undoped GaAs and InP:Fe have been characterized in this manner, and comparisons of images are made which demonstrate the capabilities of this technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99218
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Self-pumped phase conjugation in InP:Fe (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1968-1970 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here for the first time the demonstration of self-pumped phase conjugation in photorefractive semiconductors using 1.32 μm light. Using an ac field technique to enhance the gain coefficient in InP:Fe and a single input pump beam, phase conjugate reflectivities of 11% were measured using an input beam intensity of less than 1 mW/mm2. These results open up many possibilities for using photorefractive semiconductors in applications with low-power infrared diode lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101187
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Photorefractive properties of doped cadmium telluride (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 889-891 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first study of the photorefractive properties of doped CdTe has demonstrated high sensitivity for optical processing applications. Of the binary II-VI and III-V semiconductors, CdTe has the highest electro-optic coefficient r41 in the infrared, some three times larger than that of GaAs and InP. Deep levels introduced into CdTe exhibit appropriate absorption and photoconductivity at 1.06 μm by doping with V and Ti impurities. Photorefractive beam coupling experiments in CdTe:V gave small signal gains of 0.7 cm−1, and diffraction efficiencies with no applied electrical field of 0.7%. Thus, CdTe appears to be superior to previously studied III-V semiconductors, in the near-infrared spectrum. Optimization of doping and trap densities is expected to result in gain which exceeds the absorption loss, thereby allowing phase conjugation with infrared injection lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98845
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Room-temperature optically pumped Cd0.25Zn0.75Te/ZnTe quantum well lasers grown on GaAs substrates (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 834-836 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically pumped lasers emitting near 600 nm at room temperature have been fabricated for the first time in Cd0.25Zn0.75Te/ZnTe superlattices grown on GaAs substrates. The threshold pump intensity using pulsed 0.53 μm radiation increased from ∼7 kW/cm at 10 K to ∼60 kW/cm2 at room temperature with a threshold temperature dependence described by T0∼111 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100086
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Pyroelectric detection with smectic liquid crystals (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2778-2782 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The potential of ferroelectric liquid crystals for application as pyroelectric infrared detectors is examined. The liquid crystals studied belong to a family of biphenyl and phenylbenzoate esters. It is found that even within this first liquid-crystal family examined, the materials figure of merit compares well with ferroelectric solid materials commonly used for infrared detection and imaging. Because they permit very simple and flexible device design, liquid crystals are attractive candidates for these applications. However, for low-frequency applications, attention must be paid to the reduction of thermal loading by the cell walls.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337111
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Compact CdSe laser with microminiature cryogenic refrigerator (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 2974-2975 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A microminiature refrigeration system allowing precise temperature control above 77 K has been tested successfully as a compact Dewar to achieve the necessary cryogenic temperatures to operate optically pumped semiconductor lasers in an external cavity. Using this system in a mode-locked CdSe laser resulted in a stable average output power of up to 10 mW. Tunability from 7015 to 7160 A(ring) was achieved by changing the temperature from 77 to 111 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139027
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Entrance-flow invariance in a tapering elliptical slit (1986)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 29 (1986), S. 2341-2343 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Patterns of laminar flow development in the entrance region of an elliptical slit have been determined experimentally by hot-wire anemometry. The inlet cross section is circular, tapering downstream into elliptical sections of increasing eccentricity. The cross-sectional area is maintained constant throughout, to facilitate an assessment of wall effects on the developing flow patterns. Flow development along the major axis is found to lag the change in geometric contour, so that axisymmetric inlet profiles do not acquire the elliptical symmetry predicted by conformal mapping. Nevertheless, flow distributions are invariant in the mean: axial partial flows through downstream elliptical rings are nearly the same as on corresponding circular rings at the inlet. This near-invariance holds approximately even for uniformly-curved pipe sections in which intense swirl is present, and so may have more general application to conduit flows than just for the examples reported here.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.865575
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Physical and Chemical Behavior of Welding Fluxes (1986)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 16 (1986), S. 389-413 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.16.080186.002133
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Are ions important in soot formation? (1988)
    s.l. : American Chemical Society
    Energy & fuels 2 (1988), S. 494-504 
    Details
    ISSN: 1520-5029
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ef00010a016
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    Paper (German National Licenses)
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