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  • 1985-1989  (5)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2299-2301 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of concurrent Zn diffusion on the interdiffusion in an In0.06Ga0.94P0.05As0.95-GaAs heterostructure grown by liquid phase epitaxy was investigated. A 25 h, 700 °C diffusion anneal was performed using an equilibrium ternary diffusion source and profiles of In and P were measured with secondary-ion mass spectrometry. The Zn diffusion selectively enhances the cation (In-Ga) interdiffusion; with concurrent Zn diffusion, the interdiffusion coefficient for the In-Ga components is ≈5×10−14 cm2/s, as compared to ≈6×10−16 cm2/s for anions (As-P). A kick-out mechanism is proposed to explain the results.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1768-1770 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of concurrent Zn diffusion on the interdiffusion in a Gax In1−x Asy P1−y -InP heterostructure (x=0.28, y=0.61) was investigated using Auger electron spectroscopy and secondary-ion mass spectrometry. The measured profiles showed that the Zn diffusion (600 °C, 1–4 h) predominantly enhanced the cation (In-Ga) interdiffusion. The result could not be interpreted by the Zn-vacancy complex model. Under conditions of a group V overpressure, our results suggest that cation interstitials may control both the rate of Zn diffusion and the mixing of the group III sublattices in the InP-based alloy system.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1048-1052 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of concurrent diffusion of Zn and Si on the interdiffusion on the cation and anion sublattices was studied in InxGa1−xPyAs1−y-GaAs heterostructures (with x and y≈0.05). The heterostructures are grown by liquid phase epitaxy and the diffusion sources are equilibrium ternary tie triangle sources. The extent of interdiffusion on both group III and V atoms is observed by depth profiling In and P, respectively, with secondary ion-mass spectrometry. The Zn diffusion selectively enhances the cation (In-Ga) interdiffusion, whereas Si diffusion enhances both cation and anion interdiffusion to the same extent. A kick-out mechanism is proposed to explain the selective enhancement of the cation interdiffusion induced by Zn, and a single vacancy mechanism is proposed for the interdiffusion due to Si. Based on those observations, we propose that the impurity diffusion mechanism is a major factor in determining the degree of enhancement.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 21 (1986), S. 3952-3956 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Comparing the hydriding kinetic equations of magnesium derived from a theoretical model with the experiemental data published by Kartyet al. [1], the kinetic mechanism of the hydriding reaction of magnesium in a Mg/Mg2Cu eutectic alloy is analysed. As the eutectic structure of the alloy has the uniform interlamellar spacing of 1 Μm, one-dimensional growth of the hydride phase is assumed for the Mg2Cu-catalysed magnesium. The concurrent hydriding reactions of the vapour-deposited pure magnesium as well as Mg2Cu-catalysed magnesium are discussed. In both cases, the diffusion of hydrogen through the hydride phase is the rate-controlling step. Quantitative equations for the reaction and the effective particle size of pure magnesium are given, which can be used for reactor design.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 21 (1986), S. 3952-3956 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Comparing the hydriding kinetic equations of magnesium derived from a theoretical model with the experiemental data published by Kartyet al. [1], the kinetic mechanism of the hydriding reaction of magnesium in a Mg/Mg2Cu eutectic alloy is analysed. As the eutectic structure of the alloy has the uniform interlamellar spacing of 1 Μm, one-dimensional growth of the hydride phase is assumed for the Mg2Cu-catalysed magnesium. The concurrent hydriding reactions of the vapour-deposited pure magnesium as well as Mg2Cu-catalysed magnesium are discussed. In both cases, the diffusion of hydrogen through the hydride phase is the rate-controlling step. Quantitative equations for the reaction and the effective particle size of pure magnesium are given, which can be used for reactor design.
    Type of Medium: Electronic Resource
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