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Digitale Medien

Zn diffusion enhancement of interdiffusion in a GaAs-InGaPAs heterostructure (1988)

Park, H.-H. ; Lee, K. H. ; Stevenson, D. A.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 53 (1988), S. 2299-2301

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The influence of concurrent Zn diffusion on the interdiffusion in an In0.06Ga0.94P0.05As0.95-GaAs heterostructure grown by liquid phase epitaxy was investigated. A 25 h, 700 °C diffusion anneal was performed using an equilibrium ternary diffusion source and profiles of In and P were measured with secondary-ion mass spectrometry. The Zn diffusion selectively enhances the cation (In-Ga) interdiffusion; with concurrent Zn diffusion, the interdiffusion coefficient for the In-Ga components is ≈5×10−14 cm2/s, as compared to ≈6×10−16 cm2/s for anions (As-P). A kick-out mechanism is proposed to explain the results.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.100259

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