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  • 1985-1989  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Quantitative AES depth profiling of very thin overlayers (1986)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 8 (1986), S. 147-157 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A model calculation is proposed which quantitatively evaluates measured AES sputtering profiles of very thin overlayers in terms of the original elemental depth distribution. The model is based on the sequential layer sputtering model, including the escape depth of the Auger electrons. A proposal for the incorporation of a site dependent sputtering yield and of preferential sputtering effects is presented and the limitations and capabilities are discussed. Applications to experimental data are shown for oxide films on tantalum, for an oxidefilm on a NiCr20 alloy and for a passive film on FeCr18Ni9.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740080403
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    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    RBS and AES depth profiles of Pd deposited on Si after annealing at different temperatures (1988)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 12 (1988), S. 334-338 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Palladium silicide films were obtained after annealing thermally evaporated Pd layers on 〈111〉 p-type Si substrates. The silicide layers formed at different temperatures were characterized by Rutherford backscattering (RBS) and Auger electron spectroscopy (AES). A quantification of the AES depth profiles was made by comparing the profiles with the RBS results. The sputtering time scale was converted into a depth scale using the values of the sputtering yields calculated from the RBS thickness and the AES sputter times. The transformation of the measured Auger intensities into concentration allowed a quantitative study of preferential sputtering in Pd2Si, taking into account the composition given by RBS. Finally we estimated the depth resolution of the AES profiles by comparing the width of the interfaces obtained from both techniques.
    Additional Material: 3 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740120603
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    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    An AES study of the oxidation of polycrystalline zirconium at room temperature and low oxygen pressuresPaper presented at ECASIA 85, European Conference on Applications of Surface and Interface Analysis, 14-18 October 1985, Veldhoven, the Netherlands. (1987)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 10 (1987), S. 177-183 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Auger electron spectroscopy has been used to characterize the oxidation of polycrystalline zirconium in an oxygen atmosphere at low pressures (10-8 ≤ Po2 ≤ 10-5 Torr) and room temperature after cleaning the surface by Ar+ -ion bombardment. Quantitative analysis of the oxidation process was performed by using the intensity of the Zr(M45N23N45) line which is characteristic of the metallic zirconium. It is concluded from this work that oxidation proceeds as follows: (i) dissociative chemisorption for oxygen exposures lower than 2 L; (ii) formation of nuclei of oxide which grow until coalescence for exposures between 2 and 60 L; (iii) thickening of the oxide film grown in the previous stage. A limiting thickness of 1.5-2 nm is estimated.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740100402
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Quantitative AES and RBS depth profiles of titanium silicide films on GaAs after annealingPaper presented at the Quantitative Surface Analysis (QSA-5) Conference, London, 15-18 November 1988. (1989)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 14 (1989), S. 413-418 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Quantitative RBS and AES depth profiles of TiSi2 contacts deposited on GaAs by co-sputtering in a magnetron system have been performed. The bulk composition and thickness of the films were determined by RBS. AES showed that some oxygen was incorporated in the silicide layer during the deposition procedure. Comparing the depth profiles provided by both techniques, preferential sputtering effects have been studied. It is shown that silicon is preferentially sputtered as a consequence of its segregation to the surface. Sputter yields of the compound (YTiSi2 = 2.85 atoms ion-1) and of the individual components (YTic = 2.5 atoms ion-1 and YSic = 3.1 atoms ion-1) were also estimated for 3-keV Ar+ ions. Important interdiffusion effects appear to occur at annealing temperatures above 600°C. It is also observed that As has a higher mobility than Ga in TiSi2 when annealed at 800°C.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740140620
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    Paper (German National Licenses)
    Fulltext
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