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  • 1985-1989  (12)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 20 (1985), S. 4185-4201 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Starting from the Cottey conduction model and its extension, it is shown that the Fuchs-Sondheimer functions can be approximated by the extended Cottey function at any reduced thickness, provided that the specular electronic reflection coefficient,p, takes values larger than 0.31. Whatever the values ofp and the film thickness be an analytical formulation (in the form of the Cottey function) is proposed for an accurate approximation of the Fuchs-Sondheimer function. Moreover, it is suggested that the scattering processes defined in the Fuchs-Sondheimer model have no interaction.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 23 (1988), S. 1464-1473 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In defining an effective relaxation time which depends on the root mean square (r.m.s.) surface roughness and on the angle of incidence of electrons, theoretical results on the electrical conductivity, the magnetoresistance and the Hall coefficient in thin metal films subjected to a transverse magnetic field have been extensively presented. Except for the magnetoresistance, a decrease in the overall size effect is observed in transport parameters with respect to the predictions of classical theories based on the Fuchs-Sondheimer or the Coney models. The size effect in the product resistivity x temperature coefficient of resistivity is found to be correlated with that in the normalized Hall coefficient. Tentative attempts to fit previously published data to framework of the combined Soffer-Cottey model are undertaken. As a result, difficulties in choosing reasonable values for the bulk parameter in the limit of very small reduced thicknesses are outlined. In the regime of relatively large reduced thicknesses, emphasis is placed on the requirement of the simultaneous measurements of various transport parameters on the same metal films and of a systematic control of the surface texture and the morphology of films to provide a meaningful interpretation of experimental data.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 24 (1989), S. 3029-3039 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A study has been made of the rate at which variousY-rotated quartz plates are etched in a concentrated ammonium bifluoride solution. The changes in the surface texture of these differently oriented plates on repeated etching are systematically investigated. To obtain all the information needed for an analysis of the dissolution shapes in the framework of the tensorial representation of the dissolution slowness the profile graph of a deeply etchedY-cut plate is also reported. The polar diagramL xz (θ) of the dissolution slowness associated with theY-rotated quartz plates is then derived using profile graph data. Numerical and graphical simulations of the dissolution shapes are used to verify the adequation of the lawL xz (θ). The comparison of the theoretical etch profiles with the Z" etch profiles produced by repeated etching on someY-rotated quartz plates shows complete agreement. Excellent agreement is also found between the theoretical and experimental shapes of the magnified profile graph related to deeply etchedY sections. From the consistency between the observed dissolution shapes and the computed shapes deduced from the tensorial analysis of the dissolution we can conclude that the proposed polar diagramL xz (θ) represents accurately the variations of the dissolution slowness with the angle θ in theXZ plane.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 24 (1989), S. 1077-1088 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A tensorial method is used to determine the equation of the representative surface of the dissolution slowness vector from a vectorial analysis of the dissolution which in three dimensions is described in terms of an orientation dependent dissolution slowness vector. Calculations are derived for the trigonal class 32 and applied to singly rotated quartz crystals for which coefficients are evaluated up to the 16th order. The polar diagram of the dissolution slowness is presented for orientations,θ, in the range [−60°, 60°]. A numerical simulation of the dissolution based on the vectorial analysis is used to undertake a systematic comparison of the shape of the theoretical dissolution profiles with the experimentalZ′ traces of differently oriented singly rotated quartz plates. For BT-cut plates an excellent agreement is found between theoretical and experimental results. For the AT-cut plates withθ 〈 29° the agreement is not so good. However, since these AT plates are cut in various quartz crystals the deviation may be attributed to dispersion in the measurement of the etch rate. Thus combining the vectorial analysis of the dissolution with a tensorial representation of the slowness surface provides a useful method for accurately determining the shape of the dissolution profiles of quartz crystals.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 20 (1985), S. 4514-4520 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract New approximate equations for the conductivity of metal films are derived from the theoretical predictions of the surface roughness model previously proposed to describe the effect of the rms surface roughness on the film conductivity. Comparison between exact and approximate values of the film conductivity shows good agreement in well defined thickness and roughness parameters ranges. It is found that these approximate equations are convenient tools for a systematic study of the influence of annealing temperature or condensation conditions on the film surface properties. On the basis of the present model previously published data are reinterpreted giving experimental values for the fractional change in the surface roughness due to the nucleation of a metal overlayer.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 21 (1986), S. 3551-3560 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A study has been made of the rate at which the rhombohedral faces of a natural quartz crystal are etched in a concentrated ammonium bifluoride solution. The thickness of the disturbed surface layer created by an initial mechanical lapping is estimated from rate data. The etching rate as well as this thickness are found to be sensitive to natural face orientation. The changes in the surface texture of the rhombohedral faces with repeated chemical etchings are investigated. The variation in the roughness parameters with the average depth of etch shows both directional and orientation effects. The chemical attack results in the formation of stable etch figures characteristic to the orientation of the surface on which they lie and which enlarge with repeated etchings. finally, schematic etch figures are proposed for the differently oriented rhombohedral faces.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 22 (1987), S. 2043-2050 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In the framework of a combined Soffer-Cottey model the temperature coefficient of resistivity is calculated by incorporating surface roughness and angular effects. In the limiting case of moderately rough surfaces a linear relation is proposed. Correlated size effects in the product of resistivity × temperature coefficient of resistivity are studied and vanishing of the deviation from Matthiessen's rule is predicted except for rough surfaces and for very thin films. Tentative attempts to fit previously published data on the basis of the present model are undertaken. Difficulties in controlling morphology and geometrical surface properties of films with various thicknesses are outlined. As a consequence a special emphasis is placed on procedures for overcoming these problems.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 20 (1985), S. 1901-1919 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Thin metal films can be deposited in a number of different ways. As a result several types of defects or impurities are frozen in the film. In most practical cases films exhibit grain boundaries which play a decisive role in transport properties. This paper reviews the advances that have been made during the last five years in the field of theoretical description of electronic scattering at grain boundaries. Analytical expressions for the transport parameters (such as resistivity, temperature coefficient of resistivity and thermopower) of columnar, monocrystalline and polycrystalline films are derived. Care has been taken to give linearized equations for the transport phenomena. Methods for extracting grain parameters are outlined. Special attention is focused on correlated size effects. Imperfection or impurity effects on the film resistivity and thermopower are considered. Methods for determining the energetic parametersU andV and the componentS 1 of the thermopower associated with imperfections are proposed. Special emphasis is placed on procedures for identifying imperfections by simultaneous study of the restructuration processes induced by thermal ageing and of the changes in transport parameters on ageing.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 21 (1986), S. 3551-3560 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A study has been made of the rate at which the rhombohedral faces of a natural quartz crystal are etched in a concentrated ammonium bifluoride solution. The thickness of the disturbed surface layer created by an initial mechanical lapping is estimated from rate data. The etching rate as well as this thickness are found to be sensitive to natural face orientation. The changes in the surface texture of the rhombohedral faces with repeated chemical etchings are investigated. The variation in the roughness parameters with the average depth of etch shows both directional and orientation effects. The chemical attack results in the formation of stable etch figures characteristic to the orientation of the surface on which they lie and which enlarge with repeated etchings. finally, schematic etch figures are proposed for the differently oriented rhombohedral faces.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 22 (1987), S. 2906-2912 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Defining an effective relaxation time which depends on the root mean square (rms) surface roughness and on the angle of incidence of electrons and then using the Boltzmann transport equation general expressions have been derived for the Hall coefficient and conductivity in thin metal films subjected to à transverse magnetic field. In the weak- and strong-field limits simple analytical equations have been proposed which reveal slight size effects in the Hall coefficient and in the magnetoresistance as well as à weak field dependence of these transport parameters in agreement with previous experiments. The theoretical predictions of the present model have been compared with those of the mean free path (mfp) method which constituted an extension of the Coney model. 1n conclusion a correlation between the respective size parameters,A, in the present model and, µ, in the mfp method is proposed.[/p]
    Type of Medium: Electronic Resource
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