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  • 1985-1989  (10)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Deep levels in vapor epitaxial indium phosphide grown in the presence of ammonia (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 4616-4618 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in vapor epitaxial indium phosphide grown in the presence of ammonia were investigated by transient capacitance spectroscopy. A total of three hole traps associated with nitrogen doping was observed with activation energies of 0.21, 0.3, and 0.45 eV. The traps H(0.21) and H(0.3) are tentatively attributed to a nitrogen-impurity complex. Concentrations of deep trapping states as high as 8×1014 cm−3 were observed in the as-grown layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335369
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electronic and optical properties of deep levels in iron-doped InAsP alloys (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6770-6774 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic and optical properties of deep levels in Fe-doped InAsP grown by organometallic vapor phase epitaxy are investigated. Two deep levels associated with Fe are observed in the alloys. From measurements of the temperature dependence of resistivity, photoluminescence, and photoconductivity, the energy levels of iron in the alloys are determined for a wide range of compositions. The variation of the positions of the Fe energy levels as a function of composition is explained in terms of the vacuum-referred binding energies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342511
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Electronic and optical properties of Fe-doped InP prepared by organometallic vapor-phase epitaxy (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 4342-4344 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of Fe into InP grown by organometallic vapor-phase epitaxy using ferrocene as the dopant source has been studied. Room temperature resistivity of the doped epitaxial layers varied from 0.14 to 7×104 Ω cm. Photoluminescence measurements at 10 K indicated that the predominant deep radiative transition in the doped InP was at 1.07 eV. The relative intensity of this band depended on the ferrocene partial pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337432
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Monolayer abruptness in highly strained InAsxP1−x/InP quantum well interfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1142-1144 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAsxP1−x/InP strained quantum well structures have been prepared by atmospheric-pressure organometallic vapor phase epitaxy (OMVPE). Structures with compositions of x=0.40–0.67 and quantum well thicknesses of 0.8–16 nm were evaluated using photoluminescence spectroscopy. Strain in the pseudomorphic wells ranged from 1.3 to 2.1%. Doublets and multiplets are observed in the photoluminescence spectra and are attributed to luminescence from regions in the wells differing in thickness by a single monolayer, with atomically smooth interfaces over areas greater in lateral extent than the exciton diameter. Typical full widths at half maximum of the photoluminescence from the thinnest wells are 8–14 meV, comparable to the best reported values for thin lattice-matched quantum wells prepared from the InGaAs(P)/InP system using OMVPE.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100742
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  • 5
    Electronic Resource
    Electronic Resource
    Surface photovoltage spectroscopy of surface states on indium phosphide (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1352-1354 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium phosphide photoelectrodes have been studied in situ using surface photovoltage spectroscopy. The observed spectra were a strong function of electrode surface conditions. Electronic properties of the chemically induced surface states correlated well with previously reported values determined by surface photovoltage spectroscopy measurements in vacuum. Metal deposits of Cu and Ag were found to induce deep surface states at 0.9 eV above the valence-band edge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99156
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of Mn-doped InAsxP1−x grown by organometallic vapor phase epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1155-1157 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of InAsxP1−x:Mn are grown by organometallic vapor phase epitaxy on (100) oriented InP substrates. The InAsxP1−x layers are deliberately doped with Mn from the vapor phase. Photoluminescent properties are studied as a function of alloy composition for x=0–0.52. Experimental data indicate that the manganese acceptor level is pinned to the vacuum level for the range of alloy compositions studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99190
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Organometallic chemical vapor deposition of superconducting, high Tc Pb-doped Bi-Sr-Ca-Cu-O thin films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1906-1908 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly oriented films of the high Tc Bi-Pb-Sr-Ca-Cu-O (BPSCCO)superconductor have been prepared by two organometallic chemical vapor deposition (OMCVD) approaches. In the first approach, Pb is introduced by alternate deposition of BSCCO and PbOx films using the volatile metalorganic precursors Cu(acetylacetonate)2, Sr(dipivaloylmethanate)2, Ca(dipivaloylmethanate)2, triphenyl bismuth, and tetraphenyl lead. In the second approach, Pb is incorporated into an OMCVD-derived BSCCO film by vapor diffusion using PbO as the source. X-ray diffractometry and scanning electron microscopy reveal that Pb doping significantly improves the crystalline orientation and the film morphology. Films deposited by both methods on [100] single-crystal MgO consist predominantly of the Bi2(Sr,Ca)3Cu2Ox phase and have a high preferential orientation of the crystallite c axes perpendicular to the substrate surface. Four-probe resistivity measurements indicate the onset of film superconductivity at ∼110 K and zero resistance by 80 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102330
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  • 8
    Electronic Resource
    Electronic Resource
    Luminescence of heteroepitaxial zinc oxide (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 138-140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin layers of ZnO were grown on (0001) oriented sapphire by organometallic chemical vapor deposition. Low-temperature photoluminescence indicates that near-band-edge luminescence dominates the spectrum. In contrast to bulk grown material deep level luminescence for the layers is relatively weak.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99030
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial growth of manganese-doped indium phosphide (1987)
    Springer
    Journal of materials science 6 (1987), S. 1310-1312 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01794600
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  • 10
    Electronic Resource
    Electronic Resource
    Reactor production of anhydrous18F ion (1985)
    Springer
    Journal of radioanalytical and nuclear chemistry 92 (1985), S. 27-35 
    Details
    ISSN: 1588-2780
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering
    Notes: Abstract The direct production of anhydrous13F ion has been achieved through the incorporation of a new approach to hot atom reactions for reactor generated radiopharmaceuticals. Capitalizing on the traditional Li2CO3 method for hydrated18F production, a unique target design and geometry utilizing neutron generated energetic tritions emerging from the surface of a thin LiF embedded stainless steel matrix react with gaseous O2 to produce18F as a free recoiling anhydrous species. Approximately 10–15 MBq of reactive anhydrous18F ion absorbed onto a metallic foil has been produced by this method. Verification of the production of18F was substantiated through decay measurements using Ge(Li) spectroscopic analysis, and by the synthesis of18F-fluoromethane gas. Cyclotron gas target chemistry which has been instrumental in the preparation of18F-2FDG and other metabolic tracers may be reproduced using this technique by the addition of 1% F2 scavenger gas to a recirculating reactor gas handling system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02065387
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