Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
69 (1991), S. 7319-7321
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Using conductance and capacitance data for metal-oxide-semiconductor (MOS) structures on n-type β-SiC, the density of states at the β-SiC/SiO2 interface, their location in the bandgap of β-SiC, and the electron capture probability are obtained. The MOS structures were fabricated by oxidizing β-SiC in wet oxygen. It is found that interface-state density of the order of 1011 states/(cm2-eV) is located between 0.28–0.40 eV below the conduction-band edge of β-SiC. The electron-capture probability is in the range from 4.2×10−9 to 8.4×10−8 cm3/s. This study shows that the electrical properties of β-SiC MOS structures are similar to that of Si MOS structures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.347582
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