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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 73 (1951), S. 5007-5008 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1368-1371 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the n-type doping of the wide gap II-VI semiconductor CdMgTe. Bromine and chlorine have been used as dopants during molecular beam epitaxy. For the CdTe base material both bromine and chlorine give shallow donors, and free carrier concentrations of up to 2.8×1018 cm−3 have been reached. For increasing Mg concentration, however, deep donors are created, limiting the free carrier concentration at room temperature. This is demonstrated by Hall effect measurements at different temperature. The deep donors can be converted to metastable shallow donors by light illumination at temperatures below about 180 K, which results in persistent photoconductivity. We interpret our results in terms of a DX-like state, which is introduced by both the chlorine and bromine doping, and which moves into the band gap with increasing Mg concentration. We conclude that the limit in the n-type doping of CdMgTe, the band gap of which can easily be tuned through the whole visible range, is an intrinsic property of the dopants used, and not due to self-compensation caused by nonideal growth conditions.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A variety of BeMgZnSe–ZnSe- as well as BeTe-based quantum-well structures has been fabri- cated and investigated. BeTe buffer layers improve the growth start on GaAs substrates drasti- cally compared to ZnSe/GaAs. The valence-band offset between BeTe and ZnSe has been determined to be 0.9 eV (type II). Due to the high-lying valence band of BeTe, a BeTe–ZnSe pseudograding can be used for an efficient electrical contact between p-ZnSe and p-GaAs. BeMgZnSe quaternary thin-film structures have reproducibly been grown with high struc- tural quality, and rocking curve widths below 20 arcsec could be reached. Quantum-well structures show a high photoluminescence intensity even at room temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6329-6332 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on resonant tunneling through ZnSe/BeTe double-barrier, single-quantum-well structures. Negative differential resistance has been observed in the current–voltage characteristics up to room temperature. Due to a conduction-band offset of more than 2 eV, four resonances with negative differential resistance could be detected for this semiconductor material combination at liquid-helium temperature. The structures exhibit a peak-to-valley ratio up to 6:1 at 4.2 K. Current–voltage characteristics as a function of temperature have been studied and analyzed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 21 (1949), S. 827-830 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reduction of extended defects in ZnSe based II-VI heterostructures grown by molecular beam epitaxy on (001) GaAs is reported, using BeTe buffer layers as a novel approach. After defect selective chemical etching three different types of etch pits could be observed by optical microscopy. By the application of a thin BeTe buffer layer the density of paired Frank type stacking faults could be strongly reduced to values below 103 cm−2. The role of Se in the background pressure for the defect nucleation at the II-VI/GaAs interface is significant. It has been found that BeTe can form a smooth interface to GaAs and ZnSe which is reflected in high resolution x-ray diffraction data. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2932-2934 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present optical investigations on CdTe/(CdMg)Te single quantum wells (QWs) and demonstrate the high structural quality of the pseudomorphic grown QWs structure which shows high photoluminescence efficiency up to room temperature. Due to the large band-gap difference between CdTe and Cd0.51Mg0.49Te of more than 0.8 eV remarkable strong confinement effects are observable. A strong enhancement of the exciton binding energies is found by decreasing well width. In the 50-A(ring)-wide QW the binding energy is more than two times larger compared with that of bulk CdTe. In addition, a strong functional dependence of the localization energy of donor bound excitons on the well thickness is found. A valence-band offset of 30% in the strain-free limit is determined from the energy difference between heavy- and light-hole excitons which is consistent with the strong blue shift of exciton energies by decreasing well widths and the observed effective electron-hole confinement.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 280-282 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Beryllium chalcogenides have a much higher degree of covalency than other II–VI compounds. Be containing ZnSe based mixed crystals show a significant lattice hardening effect. In addition, they introduce substantial additional degrees of freedom for the design of wide gap II–VI heterostructures due to their band gaps, lattice constants, and doping behavior. Therefore, these compounds seem to be very interesting materials for short wavelength laser diodes. Here, we report on the first fabrication of laser diodes based on the wide band gap II–VI semiconductor compound BeMgZnSe. The laser diodes emit at a wavelength of 507 nm under pulsed current injection at 77 K, with a threshold current of 80 mA, corresponding to 240 A/cm2. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Industrial & engineering chemistry 30 (1938), S. 377-383 
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Fatigue & fracture of engineering materials & structures 20 (1997), S. 0 
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract— The boundary value problem for an arbitrarily shaped plane crack embedded in a 3D linear elastic solid can be reduced to a governing hyper-singular integral equation. A discretizing procedure based on a triangulation of the crack area has been offered in Part I of this work. The main goal of Part I is to introduce the analytical results for the 18 resulting finite-part integrals defined over a triangular mesh area. The finite-part integrals occur in those triangles where the source point coincides with one of the element nodes. Mostly the source point lies outside of the considered triangle. In these cases the occurring area integrals are regular.The aim of Part II is, therefore, the derivation of the closed form expressions for the relevant 18 regular area integrals. The resulting relations are of algebraic form which can easily be coded in compact form. Their numerical proof by two different methods shows the highest accuracy and, therefore, the correctness of the final solutions. The relevant numerical results are offered in Appendix I.With the formulae provided in Part I and Part II of the paper the determination of the coefficient matrix, necessary for the calculation of COD values from a linear equation system, is precise and needs only minimum computer time.
    Type of Medium: Electronic Resource
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