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Determination of localized level energies by a statistics of the fermi-level (1977)

Belche, P. ; Hoffmann, H. J. ; Stöckmann, F.

Springer

Applied physics 12 (1977), S. 379-381

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ISSN: 1432-0630

Keywords: 71.55 ; 72.20

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract For a very large number of samples of a semiconducting material, which is not intentionally doped, the Fermi-level coincides approximately with the respective energy levels of the accidential impurities and defects. Based on this fact, the energies of localized levels were determined from a statistic of the Fermi-level in CdSe platelets. These energies agree very well with most of the values obtained with different methods by other authors.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00886040

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