ISSN:
1090-6487
Keywords:
85.25.Cp
;
74.50.+r
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract Focused ion beam (FIB) and ion milling techniques are developed for the fabrication of Bi2Sr2CaCu2O8+1d (Bi-2212) stacked junctions with in-plane size L ab ranging from several microns down to the submicron scale without degradation of superconducting transition temperature T c. It is found that the behavior of submicron junctions (L ab〈1 µm) is quite different from that of larger ones. The critical current density is considerably suppressed, the hysteresis and multibranched structure of the current-voltage (I-V) characteristics are eliminated, and a periodic structure of current peaks appears reproducibly on the I-V curves at low temperatures. The period ΔV of the structure is consistent with the Coulomb charging energy of a single pair, ΔV=e/C, where C is the effective capacitance of the stack. It is considered that this behavior originates from the Coulomb blockade of the intrinsic Josephson tunneling in submicron Bi-2212 stacks.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.567988
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