ISSN:
1432-0630
Keywords:
46.30 Jv
;
68.10 Et
;
46.30 Rc
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Mechanical strains along oxide edges of semiconductor devices with oxide isolation were studied by real-time x-ray topography in the temperature range from 20 to 1100°C. Due to the different thermal expansion coefficients of silicon and oxide, the strain at these edges decreases continuously with increasing temperature. The strength of the strain pattern corresponds to the structure size. The strain depends also on the thickness of the Si3N4 layer though the nitride was removed before the experiment. During the first heat treatment the contrast splits up into two lines at about 780°C.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00899578
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