ISSN:
1432-0630
Keywords:
68.35.Fx
;
64.60.My
;
81.15.Cd
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Al/Au multilayers (average composition Al2Au, individual layer thicknesses 1 nm Al and 0.71 nm Au) are prepared at 90 K by ion beam sputtering. The electrical resistance of the growing films is monitored in situ. From the results obtained in this way it can be concluded that interface reactions occur transforming the ultrathin layers into an amorphous phase, which is stable up to 255 K. For larger individual layer thicknesses (2.1 nm Au and 3 nm Al), the interface reaction into the amorphous state is incomplete. Based on a simple parallel-resistor model, one finds that the interface reaction into the amorphous phase is restricted to a thickness of less than 3.5 nm. The temperature dependence of the resistance of such thicker multilayers indicates the onset of interdiffusion of the yet unreacted material at T=200 K resulting in the crystalline Al2Au-phase.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00332601
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