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  • 61.80J  (2)
  • 72.80N  (1)
  • PACS: 78.65; 61.80J  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Generation of optical contrast in insulating materials by irradiation with focused ion beams (2000)
    Springer
    Applied physics 71 (2000), S. 565-569 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 78.65; 61.80J
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The optical properties of crystalline insulating materials can markedly be modified by irradiation with energetic ions. The exposed areas of such materials absorb and reflect light more strongly than non-irradiated ones. In this way, optical contrast is created. With modern equipment, ion beams of sufficient intensity can be focused to submicron dimensions. Thus, both analog and digital information can be recorded with pixel densities of Gbit/cm2 to Tbit/cm2. In particular, crystalline films of group-IV elements of the periodic system, such as Si, SiC and CD (diamond), are best suited for this novel ionographic process. The physical foundations of this technology and the resulting properties of the recorded data will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390000625
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Optical absorptivity of ion-beam irradiated silicon (1988)
    Springer
    Applied physics 45 (1988), S. 69-72 
    Details
    ISSN: 1432-0630
    Keywords: 78.65 ; 61.80J
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Single-crystal layers of silicon on sapphire have been irradiated with Ne and Kr ions at room temperature. The concomitant changes in optical absorption have been measured as a function of photon energy. The absorptivity of the amorphized silicon is about one order of magnitude higher as compared to the crystalline state in the photon energy interval of 1.5–3 eV. This is sufficient for generating optical patterns of high contrast by irradiation of selected parts of the wafer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618765
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Doping efficiencies of gas-phase and ion-implantation doped a-Si:H (1986)
    Springer
    Applied physics 41 (1986), S. 253-258 
    Details
    ISSN: 1432-0630
    Keywords: 72.80N
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We compare the electronic properties of gas-phase and implantation doped a-Si:H films and analyze their properties within the framework of Street's auto-compensation model [1]. We find that this model can consistently explain the varying degrees of sensitivity with respect to doping for differently prepared a-Si:H materials. In agreement with sub-band-gap absorption data our analysis indicates that the density of native dangling bond defects is increased when the film thickness is decreased and when thin films are further subjected to ion bombardment. Considering the temperature dependence of conductivity, we find that the auto-compensation model can provide an explanation for the high-temperature kink in the conductivity of doped a-Si:H films but that it fails to account for the experimentally observed universality of the “Meyer-Neldel-rule” behaviour of the conductivity prefactor in differently prepared and doped a-Si:H films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616046
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Ionographic patterns with amorphous/crystalline contrast (1987)
    Springer
    Applied physics 44 (1987), S. 153-155 
    Details
    ISSN: 1432-0630
    Keywords: 78.65 ; 61.80J
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion irradiation of thin layers of crystalline semiconductors induces a phase transition to the amorphous state. The concomitant optical contrast between unirradiated, crystalline, and irradiated, amorphous, material may be used for pattern fabrication in the submicron range. This process will be explained by the example of silicon single-crystal layers on sapphire.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00626416
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    Paper (German National Licenses)
    Fulltext
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