ISSN:
1432-0630
Keywords:
81.60.-j
;
72.80.Ng
;
84.60.Jt
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract A new microwave plasma surface passivation technique has been applied to a-Si∶H type solar cells at various low pressure O2 and H2O atmospheres. Open circuit voltageV OC close to 900 mV and in excess of 900 mV are obtained with Ir, and with Pt, respectively, as continuous barrier metals. The corresponding unpassivated cells (Schottky type solar cells) show considerably lower values ofV OC=650 mV. In contrast to published results involving Ni, Pd, Zr, and other metals as Schottky barriers, we have observed over a period of several months a remarkably good stability of the passivated devices.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00615134
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