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Synthesis of chromium silicide with laser pulses (1990)

D'Anna, E. ; Drigo, A. V. ; Leggieri, G. ; [et al.]

Springer

Applied physics 50 (1990), S. 411-415

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ISSN: 1432-0630

Keywords: 68.55 ; 79.20D ; 82.50

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Thin chromium films, 60 nm thick, were deposited onto single-crystal silicon wafers. The samples were irradiated with 30 ns single pulses from a Nd: glass laser at fluences ranging from 0.4 to 2.25 J/cm2. Rutherford backscattering spectrometry, transmission electron microscopy and electron diffraction measurements evidence the formation of CrSi2 layers at the Cr/Si interface. The silicide thickness depends on the laser fluence.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00323599

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