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  • 68.55  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 34 (1984), S. 179-184 
    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Detailed measurements have been made of the specular beam intensity in RHEED patterns from static and growing GaAs surfaces. The basic parameters investigated were substrate temperature and electron beam azimuth. The results have provided further understanding of growth dynamics and surface disorder, respectively. There is a significant trend away from two-dimensional growth at the higher temperatures, which also correspond to more Ga-rich surface structures. Conversely, surface disorder is apparently greater during growth at the lower temperatures, where the structure is As-rich. The static As-stable 2×4 surface is, however, the most ordered and the most closely two-dimensional. It has also been shown that ordered, two-dimensional growth can be initiated from excess Ga adatom populations.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 31 (1983), S. 1-8 
    ISSN: 1432-0630
    Keywords: 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Detailed observations have been made of the intensity oscillations in the specularly reflected and various diffracted beams in the RHEED pattern during MBE growth of GaAs, Ga x Al1−x As and Ge. The results indicate that growth occurs predominantly in a two-dimensional layer-by-layer mode, but there is some roughening, which is enhanced by deviations from stoichiometry and the presence of impurities. In the case of the GaAs (001) −2×4 reconstructed surface a combination of dynamic and static RHEED measurements has provided firm evidence for the presence of one-dimensional disorder features as well as surface steps.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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