ISSN:
1090-6487
Schlagwort(e):
73.23.−b
;
73.40.Gk
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Physik
Notizen:
Abstract The transport properties of GaAs/AlGaAs submicron rings with split gates in the conditions corresponding to the ring resistance R SD τ;h/e 2 are studied. Oscillations of R SD as a function of the gate voltage V G are experimentally observed. The oscillations are caused by the single-electron charging of two triangular conducting regions into which the ring is divided in the tunneling regime.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1134/1.568371
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