ISSN:
1432-0630
Keywords:
73.60
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The behaviour of the Hall mobilityμ H and the carrier concentrationn have been investigated on InAs films as a function of thickness, substrate temperature and annealing treatment. While the Hall mobility showed an increasing trend with substrate temperature and thickness for both as-deposited and annealed films, the carrier concentration for asdeposited films showed a maximum at a particular substrate temperature range while that for annealed films showed a monotonous decreasing behaviour.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00617577
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