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  • 81.40  (6)
  • 81.15  (2)
Materialart
Erscheinungszeitraum
Schlagwörter
  • 1
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 47 (1988), S. 319-325 
    ISSN: 1432-0630
    Schlagwort(e): 81.40 ; 82.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Maskless etching of Mn-Zn ferrite in H3PO4 aqueous solution by Ar+-ion laser irradiation has been investigated to obtain high etching rates and aspect-ratios of etched grooves. The etching processes have been found to be photochemical in the low laser power region and thermochemical in the high laser power region. High etching rates of up to 340 μm/s and an aspect-ratio of 30 for slab structures have been achieved. In the case of high aspect-ratio structure, the etching rate was limited by the low diffusion efficiency of etched products in the etchant. Periodic ripple structures have been observed under specific etching conditions.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 52 (1991), S. 129-134 
    ISSN: 1432-0630
    Schlagwort(e): 81.15 ; 82.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Maskless deposition of nickel lines on single crystalline Mn-Zn ferrite (MnO:ZnO:Fe2O3=31:17:52) has been investigated in a NiSO4 aqueous solution by Ar+ laser irradiation. A high deposition rate of up to 36.4μm/s was achieved by a single scan of laser beam. The purity of deposited nickel layers is up to 86%. In particular, well-defined values of laser power and laser irradiation time were necessary for effective deposition. The deposition process was found to be a thermochemical process.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 3
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 51 (1990), S. 151-154 
    ISSN: 1432-0630
    Schlagwort(e): 81.40 ; 81.60 ; 75.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The martensitic phase of 301 stainless steel has been locally transformed into the austenitic phase by irradiating it with a focused Ar-ion laser beam in order to investigate the local change of magnetic properties accompanying the phase transformation. The intensity of the magnetic signal was found to locally reduce at a laser power of 350 mW and almost extinguish at 550 mW with a beam spot size of 13.2 μm (at 1/e intensity), indicating the local austenitic phase transformation of the irradiated stainless steel.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 4
    ISSN: 1432-0630
    Schlagwort(e): 81.40 ; 82.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Thermochemical maskless etching of compound semiconductors (GaAs, InP, InSb, and GaP) has been performed by focused Ar-laser irradiation in chloride gas atmospheres. A controlled minimum linewidth of down to 0.6 μm with a maximum etching rate of up to 13 μm/s has been obtained. Minimum laser powers necessary for thermochemical etching in each of compound semiconductors were found to be 0.24, 0.56, and 0.06 W, corresponding to minimum local temperature rises of 190, 515, and 110°C for GaAs, InP, and InSb, respectively. Etching rates exhibited Arrhenius behavior with activation energies of 3.6–3.9 kcal/mole. Etching at excessively higher laser powers than those minimum powers was found, by microprobe photoluminescence measurements, to degrade the optical quality of the etched substrate.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 5
    ISSN: 1432-0630
    Schlagwort(e): 81.40 ; 82.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Single crystal ferrite has been etched by focused Ar+ laser irradiation in a CCl4 gas atmosphere. The etched groove showed cracks due to thermal stresses when samples were etched by a laser vaporization process in a vacuum, while in a CCl4 atmosphere, such cracks were not observed. An etching rate of 68 μ/s obtained for a thermochemical process by laser irradiation was four orders of magnitude higher than that for a wet chemical etching process. A high aspect (depth-to-width) ratio of up to 10 was obtained for etched grooves. Under specific conditions, bending of the groove and orientation dependence in etching rate were observed.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 6
    Digitale Medien
    Digitale Medien
    Springer
    Applied physics 47 (1988), S. 319-325 
    ISSN: 1432-0630
    Schlagwort(e): 81.40 ; 82.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Maskless etching of Mn-Zn ferrite in H3PO4 aqueous solution by Ar+-ion laser irradiation has been investigated to obtain high etching rates and aspect-ratios of etched grooves. The etching processes have been found to be photochemical in the low laser power region and thermochemical in the high laser power region. High etching rates of up to 340 μm/s and an aspect-ratio of 30 for slab structures have been achieved. In the case of high aspect-ratio structure, the etching rate was limited by the low diffusion efficiency of etched products in the etchant. Periodic ripple structures have been observed under specific etching conditions.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 7
    ISSN: 1432-0630
    Schlagwort(e): 78.65 ; 81.10 ; 81.15
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Microprobe photoluminescence (PL) measurements at 77 K were used to study the effect of the GaAs layer thickness on optical quality and variations in strain in GaAs/Si containing microcracks. PL peak intensities increase with the increase in thickness of GaAs layers and the peak intensity for the 5.5 μm GaAs layer was a factor of 20 higher than those for the 1–2 μm GaAs layers. Spatial nonuniformities in strain in the vicinity of two microcracks reveal that stress was almost released at the intersection of two microcracks and is maximum half way between two microcracks.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
  • 8
    ISSN: 1432-0630
    Schlagwort(e): 81.40 ; 82.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Laser-induced direct writing of silver lines on a ferrite surface from a silver acetate (CH3COOAg) thin layer has been investigated. The deposition is a thermochemical process and the threshold temperature for thermal decomposition of CH3COOAg is about 380° C. About 100% of Ag in the deposited lines has been achieved. The width of the deposited Ag-lines increased with the increase in laser power, and it can be accurately estimated by the temperature profile induced by laser irradiation within the power region below the melting point of ferrite. A line thickness of micron order can be formed both on a ferrite surface and on a deposited SiO2 surface, whereas the line width decreased with the increase in beam dwell time due to the vaporization of both CH3COOAg precursor and deposited Ag material.
    Materialart: Digitale Medien
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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