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  • 82.65  (5)
  • 81.15  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Wet-chemical etching of Mn-Zn ferrite by focused Ar+-laser irradiation in H3PO4 (1988)
    Springer
    Applied physics 47 (1988), S. 319-325 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Maskless etching of Mn-Zn ferrite in H3PO4 aqueous solution by Ar+-ion laser irradiation has been investigated to obtain high etching rates and aspect-ratios of etched grooves. The etching processes have been found to be photochemical in the low laser power region and thermochemical in the high laser power region. High etching rates of up to 340 μm/s and an aspect-ratio of 30 for slab structures have been achieved. In the case of high aspect-ratio structure, the etching rate was limited by the low diffusion efficiency of etched products in the etchant. Periodic ripple structures have been observed under specific etching conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615495
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Laser-induced deposition of Ni lines on ferrite in NiSO4 aqueous solution (1991)
    Springer
    Applied physics 52 (1991), S. 129-134 
    Details
    ISSN: 1432-0630
    Keywords: 81.15 ; 82.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Maskless deposition of nickel lines on single crystalline Mn-Zn ferrite (MnO:ZnO:Fe2O3=31:17:52) has been investigated in a NiSO4 aqueous solution by Ar+ laser irradiation. A high deposition rate of up to 36.4μm/s was achieved by a single scan of laser beam. The purity of deposited nickel layers is up to 86%. In particular, well-defined values of laser power and laser irradiation time were necessary for effective deposition. The deposition process was found to be a thermochemical process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323729
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Laser-induced thermochemical maskless-etching of III–V compound semiconductors in chloride gas atmosphere (1988)
    Springer
    Applied physics 45 (1988), S. 305-312 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thermochemical maskless etching of compound semiconductors (GaAs, InP, InSb, and GaP) has been performed by focused Ar-laser irradiation in chloride gas atmospheres. A controlled minimum linewidth of down to 0.6 μm with a maximum etching rate of up to 13 μm/s has been obtained. Minimum laser powers necessary for thermochemical etching in each of compound semiconductors were found to be 0.24, 0.56, and 0.06 W, corresponding to minimum local temperature rises of 190, 515, and 110°C for GaAs, InP, and InSb, respectively. Etching rates exhibited Arrhenius behavior with activation energies of 3.6–3.9 kcal/mole. Etching at excessively higher laser powers than those minimum powers was found, by microprobe photoluminescence measurements, to degrade the optical quality of the etched substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617936
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Thermochemical dry etching of single crystal ferrite by laser irradiation in CCl4 gas atmosphere (1988)
    Springer
    Applied physics 46 (1988), S. 197-205 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Single crystal ferrite has been etched by focused Ar+ laser irradiation in a CCl4 gas atmosphere. The etched groove showed cracks due to thermal stresses when samples were etched by a laser vaporization process in a vacuum, while in a CCl4 atmosphere, such cracks were not observed. An etching rate of 68 μ/s obtained for a thermochemical process by laser irradiation was four orders of magnitude higher than that for a wet chemical etching process. A high aspect (depth-to-width) ratio of up to 10 was obtained for etched grooves. Under specific conditions, bending of the groove and orientation dependence in etching rate were observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00939264
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    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Wet-chemical etching of Mn-Zn ferrite by focused Ar+-laser irradiation in H3PO4 (1988)
    Springer
    Applied physics 47 (1988), S. 319-325 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Maskless etching of Mn-Zn ferrite in H3PO4 aqueous solution by Ar+-ion laser irradiation has been investigated to obtain high etching rates and aspect-ratios of etched grooves. The etching processes have been found to be photochemical in the low laser power region and thermochemical in the high laser power region. High etching rates of up to 340 μm/s and an aspect-ratio of 30 for slab structures have been achieved. In the case of high aspect-ratio structure, the etching rate was limited by the low diffusion efficiency of etched products in the etchant. Periodic ripple structures have been observed under specific etching conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615495
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Microprobe photoluminescence measurement on heteroepitaxial GaAs on Si grown by metalorganic chemical vapor deposition (1991)
    Springer
    Applied physics 52 (1991), S. 188-191 
    Details
    ISSN: 1432-0630
    Keywords: 78.65 ; 81.10 ; 81.15
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Microprobe photoluminescence (PL) measurements at 77 K were used to study the effect of the GaAs layer thickness on optical quality and variations in strain in GaAs/Si containing microcracks. PL peak intensities increase with the increase in thickness of GaAs layers and the peak intensity for the 5.5 μm GaAs layer was a factor of 20 higher than those for the 1–2 μm GaAs layers. Spatial nonuniformities in strain in the vicinity of two microcracks reveal that stress was almost released at the intersection of two microcracks and is maximum half way between two microcracks.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324416
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Direct writing of Ag-lines on Mn-Zn ferrite by laser-induced thermal decomposition by CH3COOAg (1992)
    Springer
    Applied physics 54 (1992), S. 51-56 
    Details
    ISSN: 1432-0630
    Keywords: 81.40 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Laser-induced direct writing of silver lines on a ferrite surface from a silver acetate (CH3COOAg) thin layer has been investigated. The deposition is a thermochemical process and the threshold temperature for thermal decomposition of CH3COOAg is about 380° C. About 100% of Ag in the deposited lines has been achieved. The width of the deposited Ag-lines increased with the increase in laser power, and it can be accurately estimated by the temperature profile induced by laser irradiation within the power region below the melting point of ferrite. A line thickness of micron order can be formed both on a ferrite surface and on a deposited SiO2 surface, whereas the line width decreased with the increase in beam dwell time due to the vaporization of both CH3COOAg precursor and deposited Ag material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348130
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    Paper (German National Licenses)
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