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  • 1
    Electronic Resource
    Electronic Resource
    Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8074-8079 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well (MQW) diodes, with the MQW layer grown at different temperatures by molecular beam epitaxy, have been investigated. Temperature-dependent current–voltage studies reveal a trap-filled limit current at a low temperature and a generation-recombination current via deep levels at high temperature for a 300 °C-grown sample. Frequency-dependent capacitance and deep-level transient spectroscopy reveal one majority trap at 0.73 eV and two minority traps at 0.71 and 0.43 eV. The 0.73 eV trap is also detected in 550 °C-grown samples, suggesting that it is a common defect in relaxed InGaAs/GaAs MQWs and probably originates from the defect states related to the strain relaxation. The 0.71 eV trap is believed to be the dominating deep level that governs the current conduction due to the activation energy observed in the current–voltage characteristics. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373500
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  • 2
    Electronic Resource
    Electronic Resource
    Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1251-1254 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The onset of strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures is investigated. X-ray diffraction shows that when the InGaAs thickness increases beyond its critical thickness, another peak on the right shoulder of the GaAs peak appears, indicating that the top GaAs layer is being compressed in the growth direction by the relaxation of the InGaAs layer. Energy shifts of 44 and 49 meV are observed, respectively, from the strains of the InGaAs and GaAs top layers when increasing the InGaAs thickness from 300 and 1000 Å. These energy shifts are in agreement with theory calculated based on the relaxation process observed in x-ray diffraction, providing evidence that the relaxation occurs from near the bottom InGaAs/GaAs interface while the top interface still remains strained. This result is further corroborated by the images of cross-sectional transmission electron micrographs which show that most of the misfit dislocations are confined near the bottom interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372004
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  • 3
    Electronic Resource
    Electronic Resource
    Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1369-1373 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An increase in leakage current accompanied by a drastic carrier depletion is found for InGaAs/GaAs Schottky diodes when the InGaAs thickness is larger than its critical thickness. Due to drastic carrier depletion, free-carrier concentration around the InGaAs region for relaxed samples cannot be obtained from capacitance–voltage data but from resistance–capacitance time constant effect observed in capacitance–frequency measurement. A trap at 0.33 to 0.49 eV is observed for relaxed samples by deep-level transient spectroscopy. The resistance caused by carrier depletion has an activation energy close to that of the trap, supporting that the carrier depletion is caused by capture from the trap. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372022
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical characteristics and deep-level admittance spectroscopies of low-temperature grown GaAs p-i-n structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1255-1258 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of low-temperature grown GaAs are studied via the electrical characterization of p-i-n structures with part of the intrinsic layer grown at 300 °C. Comparisons are made between the low-temperature and normally grown samples. The current of the low-temperature sample is about two orders of magnitude higher than that of the normally grown sample in both forward and reverse bias. From temperature-dependent analysis, the leakage current of the low-temperature sample is contributed by the recombination current through defect levels around the midgap, from which a recombination lifetime of 9.4×10−12 s was obtained. By using admittance spectroscopy we observed a dominant electron level at 0.60 eV with a corresponding capture cross section of 1.0×10−13 cm2 that was not observed in the normally grown sample; thus it is believed to be introduced by the As-rich low-temperature layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363837
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  • 5
    Electronic Resource
    Electronic Resource
    Low frequency negative capacitance behavior of molecular beam epitaxial GaAs n-low temperature-i-p structure with low temperature layer grown at a low temperature (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1081-1083 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The GaAs sample under study is a n-low temperature-i-p structure grown by molecular beam epitaxy with a low-temperature (LT) layer grown at 300 °C and annealed at 620 °C for 1 h. Admittance measurements on this sample reveal a negative capacitance at low frequency. This work analyzes the origin of the negative capacitance and its corresponding frequency-dependent conductance by combining two current components: charging–discharging current and the inertial conducting current. Analysis results indicate that the activation energies and time constants of both current components closely resemble each other and should correspond to the same trap. Based on the results presented herein, we can conclude that the negative capacitance at low frequency provides evidence of a generation-recombination center with an activation energy of 0.77 eV in the LT layer. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120971
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  • 6
    Electronic Resource
    Electronic Resource
    Role of 0.66 eV dominant trap in annealed low-temperature grown molecular beam epitaxial GaAs (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1403-1409 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sample considered herein is an annealed low-temperature (LT) molecular beam epitaxially grown GaAs of n-LT-i-p structure with the LT layer grown at 300 °C. Characteristics involving the dominant trap level located at about 0.66 eV below the conduction band are obtained by analyzing the data of the admittance spectroscopy, capacitance–voltage, current–voltage, and frequency-dependent conductance experiments. This trap pins the fermi level of the LT layer and makes the LT layer semi-insulating. In this structure, the level interacts with both the conduction band and the valence band with a hole emission time constant characterized by an activation energy of 0.77 eV and a cross section of 1.1×10−13 cm2. This level is also an effective generation-recombination center when the temperature exceeds 300 K. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366844
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  • 7
    Electronic Resource
    Electronic Resource
    Observation of carrier depletion and emission effects on capacitance dispersion in relaxed In0.2Ga0.8As/GaAs quantum wells (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2461-2463 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strong changes in capacitance over frequency are found for highly relaxed In0.2Ga0.8As/GaAs quantum well. The high-frequency dispersion is explained by a resistance–capacitance time constant effect due to the existence of a high resistive layer while the low-frequency dispersion is due to carrier emission from traps. The high-resistance layer is created by carrier depletion when InGaAs thickness increases beyond the critical thickness. Excellent agreement is found between the data from capacitance–frequency spectra and deep-level transient spectroscopy, permitting us to conclude that both the carrier depletion and emission effects observed in capacitance–frequency spectra are due to the existence of an acceptor trap at 0.33 eV. This trap is generated when the InGaAs thickness is beyond its critical thickness and is due to defect states associated with misfit dislocations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125048
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  • 8
    Electronic Resource
    Electronic Resource
    Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3027-3029 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The carrier distribution and defects have been investigated in InAs/GaAs quantum dots by cross-sectional transmission electron microscopy (XTEM), capacitance–voltage, and deep level transient spectroscopy. Carrier confinement is found for 1.1- and 2.3-monolayer-(ML)-thick InAs samples. For 2.3 ML sample, XTEM images show the presence of defect-free self-assembled quantum dots. With further increase of the InAs thickness to 3.4 ML, significant carrier depletion caused by the relaxation is observed. In contrast to 1.1 and 2.3 ML samples in which no traps are detected, two broad traps and three discrete traps at 0.54, 0.40, and 0.34 eV are observed in 3.4 ML sample. The traps at 0.54 and 0.34 eV are found to be similar to the traps observed in relaxed In0.2Ga0.8As/GaAs single quantum well structures. By comparing with the XTEM images, the trap at 0.54 eV is identified to be the relaxation-induced dislocation trap in the GaAs layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323735
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  • 9
    Electronic Resource
    Electronic Resource
    Observation of abnormal capacitance-frequency behavior in In0.12Ga0.88As/GaAs p-i-n superlattice grown at low temperature (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1092-1094 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance-frequency measurement is used to study In0.12Ga0.88As/GaAs p-i-n superlattice, with superlattice layer grown at 300 °C by molecular-beam epitaxy. Three traps are observed, and their parameters are consistent with those obtained from deep-level transient spectroscopy. Among these three traps, the trap (Ea=0.45±0.02 eV, σ=6±4×10−17 cm2) shows an abnormal increase of capacitance with increasing frequency, similar to that observed from the 0.66 eV trap in low-temperature grown GaAs p-i-n structure, suggesting that it is created by the low-temperature growth and is a generation-recombination center. This result also shows that the capacitance-frequency measurement is effective in studying the generation-recombination centers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124607
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  • 10
    Electronic Resource
    Electronic Resource
    Heat Transfer to Dry Milk Powder during Pneumatic Transport through an Entrance Region (1973)
    s.l. : American Chemical Society
    Industrial and engineering chemistry 12 (1973), S. 424-427 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/i260048a006
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