ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present an efficient and accurate continuum-mechanics approach for the numerical prediction of displacement, stress, strain, and strain energy density fields in an anisotropic substrate (modeled as a half-space) due to a buried quantum dot (QD). Our approach is based on Green's function solution in anisotropic and linearly elastic half-space combined with the Betti's reciprocal theorem. Numerical examples clearly show that the crystalline anisotropy of the III–V semiconductor group has great influence on the elastic fields, as compared to the isotropic solution. In particular, it is found that the hydrostatic strain and strain energy density on the surface of anisotropic half-space made of different crystalline materials due to a cubic QD can be substantially different, and therefore, the isotropy approximation neglecting their differences should not be used in general. Furthermore, the hydrostatic strains on the surface of an anisotropic half-space due to a finite-size (cubic) QD and an equal-intensity point QD at relatively large depth (about twice the side length of the cubic QD) can still be quite different, in contrast to the corresponding isotropic result. These observations indicate that in modeling and analyzing the mechanical and electronic behaviors of QD semiconductor structures, the effect of crystalline anisotropy should be considered in general. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1415542
Permalink
