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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of contamination layers by emission angle dependent XPS with a double-pass CMA (1984)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 6 (1984), S. 75-77 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The use of non destructive depth profiling by emission angle dependent XPS analysis is demonstrated for a thin contamination layer consisting of carbon, hydrogen and hydride-bonded oxygen on top of an anodic oxide of Nb2O5 on Nb. Using a double-pass CMA with an angle resolved aperture and measured intensity ratios of O 1s (hydroxide)/O 1s (oxide) and O 1s (hydroxide-/C 1s) as a function of the emission angle, the thickness (d = 3.3 nm) and composition are determined.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740060207
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  • 2
    Electronic Resource
    Electronic Resource
    An AES study of the oxidation of polycrystalline zirconium at room temperature and low oxygen pressuresPaper presented at ECASIA 85, European Conference on Applications of Surface and Interface Analysis, 14-18 October 1985, Veldhoven, the Netherlands. (1987)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 10 (1987), S. 177-183 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Auger electron spectroscopy has been used to characterize the oxidation of polycrystalline zirconium in an oxygen atmosphere at low pressures (10-8 ≤ Po2 ≤ 10-5 Torr) and room temperature after cleaning the surface by Ar+ -ion bombardment. Quantitative analysis of the oxidation process was performed by using the intensity of the Zr(M45N23N45) line which is characteristic of the metallic zirconium. It is concluded from this work that oxidation proceeds as follows: (i) dissociative chemisorption for oxygen exposures lower than 2 L; (ii) formation of nuclei of oxide which grow until coalescence for exposures between 2 and 60 L; (iii) thickening of the oxide film grown in the previous stage. A limiting thickness of 1.5-2 nm is estimated.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740100402
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  • 3
    Electronic Resource
    Electronic Resource
    An AES study of the room-temperature oxidation of TaSix after bombardment with Ar+ ions of different energiesPaper presented at ECASIA 89, Antibes, France, 23-27 October 1989. (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 15 (1990), S. 440-446 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Tantalum silicide films of ∼200 nm thick and composition TaSi2 were obtained by co-sputtering in a Varian 3120 S-gun magnetron system. The films were then introduced in an AES spectrometer and bombarded with Ar+ ions of different energies in order to obtain surfaces of different compositions as a consequence of preferential sputtering effects and their dependence on the energy of the primary ions. Lowering the energy of the Ar+ ions resulted in surfaces very rich in tantalum. The interactions of these surfaces with oxygen at low pressures (10-8-10-5 Torr) and at room temperature then have been studied comparatively by Auger electron spectroscopy. Reference experiments with pure Si and Ta allowed the comparison with those of the different silicide surfaces. It is found that the oxygen uptake depends on the Ta content so that the richer in Ta the surface is, the higher the O2 incorporation. Furthermore, the uptake rate at the different TaSix surfaces resembles better the measured rate for pure Ta than that observed for pure Si. It has been observed also that the oxidation of Si is enhanced over that of pure silicon in all the surfaces studied here. Besides, the enhancement depends on the tantalum content.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740150708
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  • 4
    Electronic Resource
    Electronic Resource
    An XPS study of the kinetics of dissolution of ZrO2 in α-Zr (1990)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 16 (1990), S. 535-539 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The dissolution of a 15 Å thick oxide layer into polycrystalline Zr at temperatures between 440 and 600 K and under non-oxidizing conditions has been studied by XPS. The thickness of the oxide layer as a function of the annealing time shows a parabolic dependence. It is then concluded that the rate of dissolution is controlled by diffusion into the Zr substrate of oxygen atoms, which generate at the interface by decomposition of the oxide. In addition, the effective oxygen diffusion coefficient in the 440-600 K temperature range has been determined as D = 4.42 × 10-6 exp(-99.7/RT) cm2 s-1, with the activation energy in kJ mol-1.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.7401601111
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  • 5
    Electronic Resource
    Electronic Resource
    Composition of oxides and nitrides from line shapes of metal core level x-ray photoelectron spectra (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 205-210 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: A method is proposed which evaluates the averaged composition of a sample in terms of the centroid of the core level XP spectrum. The method is based on the basic principle of electron spectroscopy for chemical analysis, i.e. the additive property of the chemical shifts and their proportionality to the ligand co-ordination. It allows one to calculate the averaged composition of compounds if the line shapes of spectra corresponding to stoichiometric samples (including the pure metal) are known and a few simple conditions are assumed. The main advantage of this method is that the composition can be obtained even if the individual contributions of the different oxidation states cannot be resolved or deconvoluted, so that no previous knowledge of the oxidation states or co-ordination structure is necessary. This method of calculating the composition is illustrated by its application to ZrOx, HfOx, NbNx, TaNxOy and SiNxOy obtained by different methods. The results are then compared with those obtained from the usual XPS quantitative analysis, so that further insight to the sample near-surface structure and composition can be gained by this combined study.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740190140
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  • 6
    Electronic Resource
    Electronic Resource
    Interaction of oxygen with ZrN at room temperature: An XPS studyPaper presented at ECASIA 93, Catania, Sicily, 4-8 October 1993. (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 395-399 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Quantitative XPS has been used to characterize the interaction of oxygen with ZrN at room temperature. The results indicate that ZrN remains unaffected for oxygen exposures 〈104 L at oxygen pressures 〈10-7 Torr. However, higher oxygen exposures at higher pressures cause the formation of an oxynitride (ZrN0.5O0.5) and ZrO2. At 108 L saturation is reached, with the formation of an oxidized layer that is 17 Å thick formed by 5 Å of ZrO2 and an interface layer (12 Å thick) of average composition ZrN0.5O0.5. Analysis of the core levels and valence band of the oxynitride demonstrates its ionic character as well as its insulating properties in comparison with metallic ZrN.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740210612
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  • 7
    Electronic Resource
    Electronic Resource
    Charging and mixing effects during the XPS analysis of mixtures of oxides (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 22 (1994), S. 111-114 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: In this article we present an XPS analysis of mixtures of Al2O3 and TiO2 powders of different relative size in order to study differential charging effects. To illustrate some of the possible situations we have studied the behaviour of three different samples: (1) very large (microns) and porous particles of Al2O3 supporting TiO2 particles of relatively small size (300 Å); (2) Al2O3 and TiO2 particles of similar size (300 Å); and (3) very small particles (20-30 Å) of TiO2 dispersed in Al2O3 particles of 300 Å. The observed effects are then analysed by using Auger parameters and relative binding energies and discussed in terms of the different morphologies of the samples, as determined by TEM. The influence on charging of an electron flood gun and of Ar+ sputtering is also presented. In addition, ion-induced mixing effects have been clearly observed in the case of very small particles of TiO2 dispersed on alumina.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740220127
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  • 8
    Electronic Resource
    Electronic Resource
    Quantitative analysis of REELS spectra of ZrO2: Determination of the dielectric loss function and inelastic mean free paths (1994)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 22 (1994), S. 124-128 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The dielectric loss function of ZrO2 over 0-80 eV has been determined from a quantitative analysis of reflection electron energy loss spectra (REELS) at different primary energies. From this, the inelastic electron mean free path for 200-2000 eV electrons in ZrO2 has been calculated. The inelastic mean free path (IMPF) is found to depend on the depth from which the electron is backscattered. For great depths, the IMFP approaches a constant value which is the same as that which would be obtained within a model that ignores the effects of the surface. The derived IMFP values have been compared to different formulae presented in the literature and the TPP2 formula due to Tanuma et al. is found to give the best agreement with the present results.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740220130
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  • 9
    Electronic Resource
    Electronic Resource
    Quantitative chemical depth profiles of ZrN/BN multilayers Dedicated to Professor Siegfried Hofmann on the occasion of his 60th birthday. (1998)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 26 (1998), S. 806-814 
    Details
    ISSN: 0142-2421
    Keywords: multilayers ; ZrN ; BN ; AES ; RBS ; depth profiling ; factor analysis ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Multilayers of ZrN/BN have been deposited on Si(100) using a double ion beam sputtering system. The multilayers have been characterized by transmission electron microscopy, Rutherford backscattering spectroscopy and Auger electron spectroscopy (AES) depth profiles in order to get a quantitative analysis of the components and contaminants in the different layers and at their respective interfaces. Factor analysis is used to deconvolute the different chemical states of the components and to identify secondary phases and compounds that determine the quality of the multilayer. Two secondary phases have been observed at the different interfaces: one is associated with the incorporation of oxygen, mainly in the zirconium layer, and leads to the formation of ZrNxOy. In addition we have observed that Ar bombardment during the AES depth profile leads to the formation of ZrBxNy in all the interfaces. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Quantitative AES and RBS depth profiles of titanium silicide films on GaAs after annealingPaper presented at the Quantitative Surface Analysis (QSA-5) Conference, London, 15-18 November 1988. (1989)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 14 (1989), S. 413-418 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Quantitative RBS and AES depth profiles of TiSi2 contacts deposited on GaAs by co-sputtering in a magnetron system have been performed. The bulk composition and thickness of the films were determined by RBS. AES showed that some oxygen was incorporated in the silicide layer during the deposition procedure. Comparing the depth profiles provided by both techniques, preferential sputtering effects have been studied. It is shown that silicon is preferentially sputtered as a consequence of its segregation to the surface. Sputter yields of the compound (YTiSi2 = 2.85 atoms ion-1) and of the individual components (YTic = 2.5 atoms ion-1 and YSic = 3.1 atoms ion-1) were also estimated for 3-keV Ar+ ions. Important interdiffusion effects appear to occur at annealing temperatures above 600°C. It is also observed that As has a higher mobility than Ga in TiSi2 when annealed at 800°C.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740140620
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