ISSN:
1573-4854
Keywords:
porous silicon
;
diffusion-limited model
;
electronic structure
;
photoluminescence
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract We present the results of theoretical calculations for electronic structures and photoluminescence (PL) spectrum of porous silicon whose morphology is generated through the diffusion limited aggregation process of pores in a two-dimensional honeycomb lattice. We have found that due to irregularity of the structure most of its eigenstates near band gap are localized while some of them are relatively delocalized. The localization of the eigenstates near band gap causes band-gap narrowing analogous to the quantum confinement effect. Solving the time-dependent equations for the occupation numbers of the eigenstates, we show that the present model reproduces the stretched exponential decay of PL intensity observed in the experiments.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1009667310925
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