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Digitale Medien

Dry etching of InGaP and AlInP in CH4/H2/Ar (1996)

Lee, J. W. ; Pearton, S. J. ; Santana, C. J. ; [weitere]

Springer

Plasma chemistry and plasma processing 16 (1996), S. 365-378

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Details

ISSN: 1572-8986

Schlagwort(e): Plasma etching ; ECR plasmas ; rf-biasing

Quelle: Springer Online Journal Archives 1860-2000

Thema: Chemie und Pharmazie , Maschinenbau , Technik allgemein

Notizen: Abstract Electron cyclotron resonance (ECR) plasma etching with additional rf-biasing produces etch rates ≥ 2,500 A/min for InGaP and AlInP in CH4/H2/Ar. These rates are an order of magnitude or much higher than for reactive ion etching conditions (RIE) carried out in the same reactor. N2 addition to CH4/H2/Ar can enhance the InGaP etch rates at low flow rates, while at higher concentrations it provides an etch-stop reaction. The InGaP and AlInP etched under ECR conditions have somewhat rougher morphologies and different stoichiometries up to ≈200 Å from the sur face relative to the RIE samples.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF01447151

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