Electronic Resource
Amsterdam
:
Elsevier
Microelectronic Engineering
18 (1992), S. 149-173
ISSN:
0167-9317
Keywords:
GaInP
;
GalnAs
;
GalnAsP
;
InP
;
Low-pressure MOVPE
;
Process parameters
;
Reactor design
;
Substrate preparation
Source:
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
Topics:
Electrical Engineering, Measurement and Control Technology
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1016/0167-9317(92)90126-C
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