ISSN:
1432-0630
Keywords:
PACS: 73.30; 73.40
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract . Schottky contacts were prepared by evaporation of silver on H-terminated Si(1 1 1) surfaces at room temperature. The Si(1 1 1):H-(1×1) surfaces were obtained by wet-chemical etching in buffered hydrofluoric acid. The zero-bias barrier heights and the ideality factors, which were determined from I/V characteristics measured with these contacts, were found to be linearly correlated. This plot gives a zero-bias barrier height of 0.74 eV for an ideality factor of 1.01 which is obtained for image-force lowering of the barrier only. The barrier heights observed here equal the one found with Ag/Si(1 1 1)-(1×1) contacts. They were prepared by Ag evaporation onto clean Si(1 1 1)-(7×7) surfaces at room temperature and subsequent heat treatments. The present result is explained by the desorption of the hydrogen adatoms during the deposition of Ag and the existence of a (1×1)-structure at the Ag/Si(1 1 1) interface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01538339
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