ISSN:
1436-5073
Keywords:
Key words: Aluminium; plasma-assisted nitriding; AlN; AES; TEM.
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
Notes:
Abstract. Detailed examinations were made by AES depth profiling, SEM, TEM and electron diffraction to get information about the relation between treatment conditions and the state of plasma-nitrided aluminium. The chemical composition and the elemental depth distribution were proofed to be depending on gas phase mixture, pressure and temperature during plasma treatment. The admixture of hydrogen during presputtering for surface cleaning and during nitriding results both in an improved nitriding behaviour and in a reduction of the formation of conical-shaped particles at the surface. The microstructure of the nitride layer isn’t depending on tested process conditions significantly. Surface and interface between layer and substrate are roughly in a scale of a few ten nanometers owing to sputtering effects. The main phase inside the layer is nanocrystalline AlN of the known hexagonal modification. In addition, some crystallites of remaining aluminium are present as a second phase. In contrast to nitrogen-implanted aluminium no preferred lattice orientation of the AlN phase was evident.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s006040070106
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