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  • 1
    Electronic Resource
    Electronic Resource
    Modulation-doped graded structures: Growth and characterization (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2370-2375 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Remotely doped graded parabolic potential well structures have been grown and studied. Electrons distribute themselves uniformly in a parabolic well, the density being proportional to the curvature or quasidoping in the well. Quasidoped semiconductors are synthesized by molecular beam epitaxy in the GaAs/AlXGa1−XAs system through the digital alloy technique. The analog grading produced by the digital alloy is verified by photoluminescence excitation spectroscopy. Low temperature mobility measurements show higher mobility in these quasidoped semiconductors than in similar real-doped semiconductors. Alloy-disorder scattering is suggested to be the mobility-limiting mechanism in this digital alloy system. Capacitance–voltage profiling analysis of quasidoped semiconductors has been developed, and is used to measure carrier profiles in these structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348720
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  • 2
    Electronic Resource
    Electronic Resource
    The electronic structure of InGaAs/InP quantum wells measured by Fourier transform photoluminescence excitation spectroscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6855-6860 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on novel results from a systematic study of excitonic transitions in high quality metalorganic vapor phase epitaxy grown InxGa1−xAs/InP quantum wells (QWs). The electronic structure of the QWs has been studied as a function of QW width as well as the built-in strain. The characterization has been performed by means of a combined Fourier transform photoluminescence (FTPL) and FTPL excitation study of the InxGa1−xAs/InP QWs. Detailed information on the energy positions for the excitons associated with various subbands (for the electrons, heavy and light holes) up to n=5 have been obtained. The experimentally determined energy positions have been compared with theoretical predictions based on an effective mass model and bulk deformation potential theory. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363752
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  • 3
    Electronic Resource
    Electronic Resource
    Optical intervalence-subband transitions in strained p-type In1−xGaxAs/InP quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5256-5262 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice mismatch (strain) effects on the infrared absorption in p-type In1−xGaxAs/InP quantum wells are investigated systematically for both tensile (x(approximately-greater-than)0.47) and compressive (x〈0.47) strains. The mismatch of the valence-band parameters in the well and barrier materials is taken into account in the optical matrix element calculations. We find that normal incidence optical matrix elements substantially increase in the case of the compressive strain (the ground state is heavy hole) and decreases in the case of the tensile strain (the ground state is light hole). The peak of the normal incidence absorption in the compressively strained QW is shown to reach a considerable value of 5000–6000 cm−1 for a sheet hole concentration of 1012 cm−2. For the z-polarization of the light we found a substantial enhancement of the optical matrix elements in the case of tensile strain (i.e., for a light-hole ground state). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359277
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  • 4
    Electronic Resource
    Electronic Resource
    Optical properties of doped InGaN/GaN multiquantum-well structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3299-3301 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic investigation of the photoluminescence spectra from InGaN/GaN multiquantum-well structures with different levels of Si doping in the quantum well has been carried out, in order to study the screening of the strain induced piezoelectric field and potential fluctuations. It is found that the emission energy strongly depends on the carrier concentration, originating from the doping or photogeneration. The observed strong shift with Si doping can only partly be explained by the screening of the piezoelectric field. The main shift is suggested to be related to the screening of the localization potentials. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123324
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  • 5
    Electronic Resource
    Electronic Resource
    The ordered–disordered transition in Si delta-doped GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3464-3466 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report results for Si layers embedded in GaAs, extending from the delta-doped (δ-doped) range up to 6 monolayers (MLs) derived by means of variable temperature resistivity and Hall effect measurements, secondary ion mass spectrometry (SIMS), and high resolution x-ray diffractometry (HRXRD) techniques. The conductivity transition from free carrier transport in ordered δ-layers (〈1 ML) to strongly localized two-dimensional variable range hopping (2D-VRH) transport under potential fluctuation disordered conditions ((approximately-greater-than)4 ML) is clearly observed. This observation is in good agreement with the SIMS and HRXRD data. Results from the intermediate case with 2–3 MLs are also discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115794
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  • 6
    Electronic Resource
    Electronic Resource
    Time-resolved spectroscopy of Zn- and Cd-doped GaN (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4589-4592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence transients and time-resolved luminescence spectra are reported for the violet-blue emissions from epitaxial layers of Zn- and Cd-doped GaN. A typical decay time of 300 ns is reported for the blue GaN:Zn emission, peaking at about 2.89 eV. For GaN:Cd a somewhat longer decay time of τ≈1 μs dominates for the broad peak centered at ≈2.72 eV. In both cases it is concluded that the simple process involving a free-to-bound transition of an electron to a hole bound at the ZnGa, respectively, the CdGa acceptor is the dominating recombination mechanism corresponding to these characteristic decay rates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338366
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  • 7
    Electronic Resource
    Electronic Resource
    Infrared absorption frequencies and oscillator strengths of acceptors confined in GaAs/AlGaAs quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3365-3367 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infrared absorption of acceptors confined in a GaAs/AlGaAs quantum well (QW) has been calculated with and without magnetic field perturbation. The absorption frequency and oscillator strength of the dominating infrared transitions of acceptors in the QW are examined. The results show that the frequency of the acceptor transition is blueshifted with decreasing well width up to 50 A(ring). The normal incident absorption oscillator strength of the dominating acceptor transition first increases with decreasing well width, reaches the maximum of about 90 A(ring) wide QW, and then decreases with further decreasing well width. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112393
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  • 8
    Electronic Resource
    Electronic Resource
    Capture and recombination of acceptor bound excitons in the transition region from a two-dimensional to a quasi-three-dimensional GaAs/AlGaAs system (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2721-2723 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The capture and recombination processes for acceptor bound excitons (BEs) have been studied for GaAs/AlGaAs multiple quantum well structures, by varying the barrier thickness for a constant 100 A(ring) well width. The observed decay time for the acceptor BE increases rapidly with decreasing barrier width, and is determined by the relative confinement of the electron and hole wave functions. The capture rate of free excitons to the BE state of the neutral acceptor increases by about a factor 7 from a two-dimensional to a three-dimensionlike system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111454
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  • 9
    Electronic Resource
    Electronic Resource
    Photoconductivity investigation of the excitonic Auger recombination in GaAs/AlGaAs quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 720-721 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recently proposed Auger recombination mechanism in quantum wells (QWs) has been studied by means of excitation-dependent photoconductivity (EDPC) and photoluminescence (PL) in acceptor doped QWs. Free charge carriers are found to be formed although the optical excitation is resonant with the excitons well below the band gap at low temperatures. The carriers are monitored via EDPC measurements or via the enhancement of the free-to-bound transition observed in PL. The prerequisite for an excitonic Auger process in the model proposed is an ionized impurity, accomplished via the two-hole transition of the bound exciton.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112235
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  • 10
    Electronic Resource
    Electronic Resource
    Strain effects on the intervalence-subband normal-incidence absorption in a p-type InGaAs/InP quantum well (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1706-1708 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice mismatch (strain) effects on the normal-incidence infrared absorption in In1−xGaxAs/InP quantum wells is investigated systematically, both tensile (x(approximately-greater-than)0.47) and compressive (x〈0.47) cases being considered. The difference of the valence-band parameters in the well and barrier materials is taken into account in the dipole matrix element calculations. For a constant hole sheet density, the compressive stress is found to enhance the infrared absorption substantially in the frequency range around 100 meV, corresponding to the H1–H3 type transitions, and the tensile stress is shown to decrease the normal-incidence intervalence-subband absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112892
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