ISSN:
1432-0630
Keywords:
PACS: 61.46.+w; 78.66w; 81.15.Fg
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. We observed very intense and highly reproducible photoluminescence (PL) spectra for SiOx films obtained by laser ablation of Si targets in 50-mTorr oxygen gas followed by proper annealing. It was found that the PL peak continuously changes from 1.4 eV at the center of the samples to 1.8 eV at the sample edge. The optimum values of the oxygen component in SiOx was x=1.3-1.4 and the optimum annealing temperature was 1000 °C for intense PL. From transmission electron microscopy images of annealed films, Si nanocrystallites are found to be formed in the matrix of SiO2 grown from the SiOx and have diameters of 2–3 nm. These indicate that a high density of Si nanocrystallites with diameters of 2–3 nm in the SiO2 phase are probably responsible for the PL and that the Si nanostructure is well formed from the as-deposited, metastable SiOx (x=1.3-1.4) films by annealing at 1000 °C.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/s003399900295
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