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  • 1
    Electronic Resource
    Electronic Resource
    Kinetic analysis of the recombination of nitric oxide with ferrihemoproteins by the flash photolysis method (1982)
    s.l. : American Chemical Society
    Biochemistry 21 (1982), S. 729-732 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00533a022
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  • 2
    Electronic Resource
    Electronic Resource
    Suprasellar germinomas; Relationship between tumour size and diabetes insipidus (1992)
    Springer
    Acta neurochirurgica 114 (1992), S. 26-32 
    Details
    ISSN: 0942-0940
    Keywords: Suprasellar germinoma ; diabetes insipidus ; tumour marker ; hypothalamic-pituitary function
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The clinical and neuro-endocrinological aspects of 17 suprasellar germinoma patients treated between 1972–1991 are reported. Surgical extirpation was not initially attempted, but all patients received irradiation with or without a biopsy. Sixteen of those have led useful lives with appropriate hormonal replacement therapy during a mean follow up of 8 years. Seven tumours at diagnosis were less than 2 cm in diameter (type 1), nine tumours more than 2 cm (type 2), and one double midline tumour was of unknown size. All 7 type 1 patients required 1-deamino-8-D-arginine-vasopressin (DDAVP) to control diabetes insipidus (DI), but only 2 of the 9 type 2 patients have needed DDAVP since completion of the treatment. Patients with smaller tumours required more DDAVP following tumour disappearance, than those with larger tumours. The prognostic indicators for the post-treatment course of DI and retarded growth appeared to be the tumour size and the age at diagnosis. We also emphasize the absence of metastasis in unoperated cases and the use of tumour markers as a diagnostic criterion which obviates surgical acquisition of tissue to make the diagnosis. Possible reasons are discussed and the literature reviewed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01401110
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  • 3
    Electronic Resource
    Electronic Resource
    Disorders produced during high-current and high-dose phosphorus ion implantation in silicon (1979)
    Springer
    Applied physics 20 (1979), S. 225-229 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Transmission electron microscopy, optical reflection and channeling effect measurements are employed to investigate disorders in 30 keV, high dose (3×1016ions/cm2) and high current (≦5 mA) phosphorus as-implanted silicon with (111), (100), and (110) orientation as a function of temperature rise (100–850°C) by the beam heating effect during implantation. Temperature rise below 400°C results in continuous amorrphous layer formation. This contrasts with results of the recovery into single crystals for temperature rise samples above 500°C, regardless of wafer orientation. Secondary defects (black-dotted defects, dislocation loops and rodlike defects) are formed in singlecrystal recovery samples, having a deeper distribution in (110) wafers and a shallower distribution in (111) and (100) wafers. Rodlike defects observed in 850°C samples are of “vacancy” type and have the largest density in (110) wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886022
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  • 4
    Electronic Resource
    Electronic Resource
    Two groups of misfit dislocations in GaAs on Si (1996)
    Springer
    Applied physics 63 (1996), S. 359-370 
    Details
    ISSN: 1432-0630
    Keywords: 61.14 ; 61.70 ; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High-resolution cross-sectional and conventional plan-view transmission electron microscope observations have been carried out for molecular beam epitaxially grown GaAs films on vicinal Si (001) before and after annealing as a function of film thicknesses and observation directions between two orthogonal 〈110〉 directions. Two groups of misfit dislocations are characterized at the interface regions between GaAs and Si by analyzing whether their extra half planes exist in the film or the substrate side. Group I misfit dislocations due to stress caused by a lattice misfit between GaAs and Si consist of partial dislocations and 60° and 90° complete dislocations in an as-grown state. With an increase in the film thickness, partial dislocations decrease and complete dislocations increase. After annealing, partial dislocations almost completely disappear and 90° perfect dislocations are predominantly observed. Group II misfit dislocations due to thermal-expansion misfit-induced stress are all 60°-type complete dislocations regardless of film thicknesses and annealing treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01567327
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  • 5
    Electronic Resource
    Electronic Resource
    Two groups of misfit dislocations in GaAs on Si (1996)
    Springer
    Applied physics 63 (1996), S. 359-370 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.14; 61.70; 68.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  High-resolution cross-sectional and conventional plan-view transmission electron microscope observations have been carried out for molecular beam epitaxially grown GaAs films on vicinal Si (0 0 1) before and after annealing as a function of film thicknesses and observation directions between two orthogonal 〈110〉 directions. Two groups of misfit dislocations are characterized at the interface regions between GaAs and Si by analyzing whether their extra half planes exist in the film or the substrate side. Group I misfit dislocations due to stress caused by a lattice misfit between GaAs and Si consist of partial dislocations and 60° and 90° complete dislocations in an as-grown state. With an increase in the film thickness, partial dislocations decrease and complete dislocations increase. After annealing, partial dislocations almost completely disappear and 90° perfect dislocations are predominantly observed. Group II misfit dislocations due to thermal-expansion misfit-induced stress are all 60°-type complete dislocations regardless of film thicknesses and annealing treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050399
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  • 6
    Electronic Resource
    Electronic Resource
    Successful transplantation of soy bean agglutinin-fractionated, histoincompatible, maternal marrow in a patient with severe combined immunodeficiency and BCG infection (1985)
    Springer
    European journal of pediatrics 143 (1985), S. 291-294 
    Details
    ISSN: 1432-1076
    Keywords: Severe combined immunodeficiency ; HLA-haplotype mismatched bone marrow transplantation ; Soy bean agglutinin ; BCG infection
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract A successful transplantation of soybean agglutinin (SBA) and sheep red blood cell (SRBC)-fractionated, maternal marrow in a patient with severe combined immunodeficiency (SCID) is reported. The engraftment of HLA-haplotype mismatched marrow cells was obtained without apparent graft versus host disease (GVHD). With immunological reconstituion the patient recovered from a BCG infection, which might have been caused by a BCG inoculation before his bone marrow transplantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00442303
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  • 7
    Electronic Resource
    Electronic Resource
    Variable-Energy Positron-Beam Studies of Si Implanted with MeV-Energy Ions (1992)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 105-110 (Jan. 1992), p. 1471-1474 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/59/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.105-110.1471.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    Clinical pathology of malignant meningiomas (1984)
    Springer
    Acta neurochirurgica 73 (1984), S. 179-191 
    Details
    ISSN: 0942-0940
    Keywords: Meningioma ; malignant tumour ; papillary meningioma ; anaplastic meningioma
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Nineteen cases of malignant meningiomas-seven haemangiopericytic, two papillary and ten of the anaplastic type-were examined clinicopathologically. These were ten male and nine female patients and eleven of these received reoperation for recurrence. Tumours of the hemangiopericytic type had similar angiographic and macrooscopic features and malignant characteristics were found microscopically in some tumours. There were intratumoral cysts in both cases of the papillary type and these tumours had a high cellularity, an increased number of mitosis, haemorrhage and partially haemangiopericytic patterns. Six cases of the anaplastic type had changed from a benign type at recurrence and those tumours had variable features radiographically and macroscopically. Lack of typical arrangement, a large number of mitoses, increased cellularity, focal necrosis, brain infiltration, pleomorphism and anaplasia were found histologically. Four cases of the anaplastic type were diagnosed at the first operation and these tumours had apparently similar angiographic and macroscopic features, but with variable organoid structures and malignant forms, microscopically. Electron microscopic features are also described. In malignant meningiomas, the recurrence rate was high even in cases of total removal. The outcome for these patients was good in the papillary type, relatively good in the haemangiopericytic type and poor in the anaplastic type. From these results therapeutic indications are also suggested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01400851
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  • 9
    Electronic Resource
    Electronic Resource
    Primary leptomeningeal melanoma with epipharyngeal invasion (1981)
    Springer
    Acta neurochirurgica 58 (1981), S. 59-66 
    Details
    ISSN: 0942-0940
    Keywords: Meningeal melanoma ; malignant melanoma ; epipharyngeal tumour
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary A case of primary leptomeningeal malignant melanoma in a 45-year-old woman is reported. The tumour was located at the basal aspect of the brain with a larger aggregation in the left parasellar and cerebello-pontine angle regions. The tumour showed not only spinal meningeal dissemination but also infiltration into the petrous bone and along the trigeminal nerve till it reached the submucosal tissue of epipharynx. There are a few reported cases of primary leptomeningeal melanoma which invaded areas outside the central nervous system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01401683
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  • 10
    Electronic Resource
    Electronic Resource
    Attenuation values of chronic subdural haematoma and subdural effusion in CT scans (1984)
    Springer
    Acta neurochirurgica 72 (1984), S. 211-217 
    Details
    ISSN: 0942-0940
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary When peripheral blood is serially diluted with saline solution, the bloody colour is determined by the derivative of haemoglobin. Solutions over 105/mm3 red cells or 0.5 g/dl haemoglobin are represented as being sanguineous. This is the lower limit for a subdural haematoma, because the name itself requires at least a bloody appearance of its contents. Diluted blood solutions less 0.5×104 red cells or 15 mg/dl haemoglobin are macroscopically translucent or watery clear. Solutions between bloody and translucent are xanthochromic. If the contents of a subdural collection is watery clear or xanthochromic, it must be called an effusion or hygroma. The haemoglobin in haematomas is the most important factor determining the attenuation values in the CT scan. Protein, iron or calcium ions have only minimal concentration in haematomas and are neglegible for attenuation values of haematomas in the CT scan. The lightest sanguineous solution, that is a haematoma, corresponds to 15 Hounsfield's units measured by the CT scan.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01406871
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