Electronic Resource
Copenhagen
:
International Union of Crystallography (IUCr)
Applied crystallography online
13 (1980), S. 513-515
ISSN:
1600-5767
Source:
Crystallography Journals Online : IUCR Backfile Archive 1948-2001
Topics:
Geosciences
,
Physics
Notes:
The chemical composition of Ga1−xInxP (0 ≤ x ≤ 0.10) alloys epitaxically grown on GaP substrates has been determined by electron microprobe analysis and by lattice-parameter measurement (a). The a(x) calibration curve follows Vegard's law which confirms the regular character of the solid solution and the existence of strain relaxation in the epitaxic layers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1107/S002188988001268X
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