Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
73 (1993), S. 1723-1731
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Deuterium diffusion profiles in GaAs doped with different acceptors of group II (Mg,Zn,Cd) or group IV (C,Ge) have similar characteristics even though the neutralization of acceptors measured at 300 K is not always efficient. Conductivity and Hall measurements have been used to study the electrical characteristics of hydrogenated p-type GaAs epilayers. The temperature dependence of the free-carrier concentration and hole mobility before and after hydrogenation shows that the neutralization of acceptors by atomic hydrogen leads to the elimination of the shallow acceptor states. Infrared-absorption lines associated with hydrogen-acceptor complexes are observed for all acceptors except magnesium. It is established that the microscopic structure of hydrogen-acceptor complexes depends on the acceptor site in the lattice.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.353207
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