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  • 1
    Electronic Resource
    Electronic Resource
    First Synthesis of the Novel Gelsemium Alkaloids, Gelselegine, Gelsenicine, and Gelsedine Using a Biomimetic Approach (1994)
    s.l. : American Chemical Society
    The @journal of organic chemistry 59 (1994), S. 4381-4385 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00095a010
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  • 2
    Electronic Resource
    Electronic Resource
    Fluxons in thin-film superconductor-insulator superlattices (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2411-2418 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a system of thin alternating layers of superconductors and insulators the equations describing static and dynamic fluxon solutions are derived. The approach, represented by a useful compact matrix form, is intended to describe systems fabricated for example of niobium or niobium-nitride thin films; in the limit of ultrathin superconductor films it may give a model for describing fluxon motion in layered high-Tc superconductors. Numerical examples of current versus voltage curves to be expected in such an experiment are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353095
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  • 3
    Electronic Resource
    Electronic Resource
    All-perovskite-oxide ferroelectric memory transistor composed of Bi2Sr2CuOx and PbZr0.5Ti0.5O3 films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8153-8158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An all-perovskite-oxide transistor composed of a tetragonal perovskite PbZr0.5Ti0.5O3 (ferroelectric) and a layered perovskite Bi2Sr2CuO6 (conducting channel) is fabricated on a cubic perovskite Nb-doped SrTiO3 (gate electrode). We demonstrate a considerably large conductance modulation of Bi2Sr2CuO6 by varying the direction and magnitude of the polarization. The ratio of the ON- and OFF-state drain currents reaches 196. A memory retention time as long as about 8 h is also observed. The drain current versus the drain voltage curves analyzed by adopting a semiconductor model give fairly good agreement with the measurement data. We also discuss the advantages and future prospects of all-perovskite-oxide transistors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370999
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  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial structure SrTiO3〈011〉 on Si〈001〉 (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5421-5424 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An epitaxial structure, 〈011〉-oriented SrTiO3 film on Si〈001〉 substrate, is developed by inserting an epitaxial Ce0.12Zr0.88O2 buffer layer. Films are prepared by pulsed-laser deposition and evaluated by x-ray diffraction. Origin of this epitaxial growth is considered as a result of the ionic bonding at the interface of perovskite (SrTiO3) and fluorite (Ce0.12Zr0.88O2) structures. SrTiO3(011) surface of this epitaxial structure leads to a non-c-axis-oriented epitaxial growth of bismuth-layerstructured-ferroelectric Bi4Ti3O12 film on Si〈001〉. Unique surface morphologies and superior electrical properties are presented. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357461
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  • 5
    Electronic Resource
    Electronic Resource
    Numerical study of fluxon dynamics in a system of two-stacked Josephson junctions (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1171-1177 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamics of magnetic fluxons in a system of two vertically stacked long Josephson junctions is investigated numerically. The model is based on the approach by S. Sakai, P. Bodin, and N. F. Pedersen [J. Appl. Phys. 73, 2411 (1993)] and is described by two strongly coupled sine-Gordon equations. In agreement with recent experimental data, we confirm numerically the effect of splitting of the fluxon travelling mode into two separated modes with different characteristic velocities. The simulated current-voltage characteristics indicate stable phase-locked flux-flow resonances of two junctions. These results support a possibility of application of the stacked long Josephson junctions as a system of coherent oscillators for millimeter and sub-millimeter wave bands. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359547
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  • 6
    Electronic Resource
    Electronic Resource
    Low-loss GaAs/AlGaAs optical waveguides and phase modulator on silicon substrate grown by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 802-804 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and the characterization of low-loss, single-mode GaAs/AlGaAs single heterostructure ridge waveguides and a linear electro-optic phase modulator on silicon substrate. The waveguides and the phase modulator were grown by molecular beam epitaxy and were characterized at a 1.3 μm wavelength. The average TE mode propagation loss of 1.24 dB/cm, obtained for a 6-μm-wide ridge waveguide, is the lowest loss so far reported. The measured phase shift efficiency of the phase modulator was 3.5°/V mm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102668
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  • 7
    Electronic Resource
    Electronic Resource
    Cross-correlation between stress, pain, physical activity, and temporalis muscle EMG in tension-type headache (1995)
    USA/Oxford, UK : Blackwell Science Ltd
    Cephalalgia 15 (1995), S. 0 
    Details
    ISSN: 1468-2982
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Thirty-six tension-type headache subjects and 36 non-headache matched controls recorded their temporalis muscle electromyographic (EMG) activity and their pain intensity, stress and physical activity levels in a daily diary. Measurements were performed every 30 min for 6 days (EMG 3 days only). A time-lagged cross-correlational analysis between pain, stress, physical activity, and EMG shows that the highest correlation coefficient values occurred between pain and stress at the same (r=0.33) and at the two preceding 0.5 h time points (r=0.21 and r=0.26) in the headache group. Virtually no correlation was found between pain, stress, or physical activity with EMG for either group. These data show that temporalis muscle activity levels were not related to the rise and fall of the subjects’ pain or stress levels. Conversely, elevated stress appeared to be highly related to pain; it occurs as both an antecedent and simultaneous event with elevated headache pain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1468-2982.1995.1506511.x
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  • 8
    Electronic Resource
    Electronic Resource
    Microstructural characterization of Nb3Al ultrafine multifilamentary superconducting wire by analytical electron microscopy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 473-475 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microstructural characterization of the longitudinal cross section of Nb3Al wires fabricated by an Nb tube composite process is presented. The wire was produced by cold reduction and a subsequent reaction between Nb matrix and Al-Mg core (final size: ∼φ 80 nm) at 950 °C×5 min+750 °C×72 h. The A15 superconducting compound (grain size: 100 nm) and unreacted fibrous Nb were observed in the microstructure. Nb2Al or other phases rarely appeared. The average Al concentration at the A15 grain was 22–23 at. % from x-ray microanalysis. The critical current density Jc of composite processed wire depended on the grain size of A15, with fine grains providing a high Jc value.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105412
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  • 9
    Electronic Resource
    Electronic Resource
    Optical investigation of InGaN/GaN multiple quantum wells (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3128-3130 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical investigation was performed on InGaN/GaN multiple quantum well (MQW) structures with different well thicknesses. At low temperature, the excitation power dependence of the photoluminescence (PL) emission energy of a MQW with 5 nm well thickness was found to be different from that of a MQW with 2.5 nm well thickness. Their temperature dependence of the optical behaviors including the PL line shapes and the internal quantum efficiencies also showed distinct features. The optical behaviors of the quantum well with a thickness above 2.5 nm can be explained by a model based on the formation of self-organized small In-rich regions, rather than by the piezoelectric field-induced quantum-confined Stark effect. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124084
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  • 10
    Electronic Resource
    Electronic Resource
    The influence of the p-n junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diode (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1376-1378 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of photoluminescence measurement was performed on an undoped In0.126Ga0.874N/GaN multiple quantum well (MQW) structure and a light emitting diode (LED) structure using this MQW as an active region. The emission energy of the LED structure showed a red shift of about 230 meV at room temperature compared with the undoped In0.126Ga0.874N/GaN MQW. This behavior of the LED structure is attributed to the quantum-confined Stark effect due to its p-n junction induced electric field. This conclusion was confirmed by a calculation and a detailed discussion based on the theory of the quantum-confined Stark effect. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123555
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