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  • coherence length  (1)
  • ion size  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Journal of superconductivity 13 (2000), S. 393-400 
    ISSN: 1572-9605
    Keywords: spin gap ; ion size ; magnetic doping ; resistivity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Y(Ba1−x Gd x )2Cu3O7−δ compounds with x = 0 ∼ 0.15 are prepared using the solid reaction technique. With structure analysis by Rietveld refinement of x-ray diffraction, we find that Gd3+ ions prefer to occupy Y sites within lighter doping x ≤ 0.08 due to ion size effects, then begin partially to occupy Ba sites with doping content increasing, which gives vital influence on superconductivity and spin-gap properties. The magnetic doping effects of Gd3+ ions on spin-gap properties are investigated in detail by contrast of the distinguished behaviors between T* and T c, indicating that spin-gap temperature is not completely determined by the carrier density, but strongly dependent on the strength of interplane antiferromagnetic coupling. Finally, we propose an expression of in-plane resistivity dependent on the maximal width of spin-gap Δ0 to derive their values for different samples, which almost keep constant with the increase of Gd doping contents.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1572-9605
    Keywords: Critical current density ; coherence length ; penetration depth ; lower critical field H c2
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The influence of Sn doping on superconductivity in the Bi-based 2212 phase is studied in this paper. For the samples R–T relations and magnetic hysteresis loops were measured. X-ray powder diffraction analysis was also performed. For Bi1.75Pb0.25Sr2CaCu2.3−x Sn x O y , the experimental results show that by adding the proper amount of Sn the superconductivity of the samples can be improved. As x = 0.15, the critical temperature T c, the critical current density J c, and the magnetic pinning force density F reach a maximum. At T = 11 K, the critical state parameters H c1, H c2, κ, λ, and ξ are calculated and compared with the results reported by other researchers. The experimental results also show that the Sn doping is able to speed up the growth of the 2223 phase. In brief, Sn doping is an effective way of improving the superconductivity in Bi-based superconductors.
    Type of Medium: Electronic Resource
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