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The induction plasma chemical reactor: Part I. Equilibrium model (1990)

Zhao, G. Y. ; Mostaghimi, J. ; Boulos, M. I.

Springer

Plasma chemistry and plasma processing 10 (1990), S. 133-150

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ISSN: 1572-8986

Keywords: Induction plasma ; modeling ; chemical equilibrium ; silicon nitride synthesis

Source: Springer Online Journal Archives 1860-2000

Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology

Notes: Abstract A mathematical model is presented for the numerical simulation of the flow, temperature, and concentration fields in an rf plasma chemical reactor. The simulation is performed assuming chemical equilibrium. The extent of validity of this assumption is discussed. The system considered is the reaction of SiCl4 and NH3 for the production of Si3N4.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF01460452

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