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  • 1
    Digitale Medien
    Digitale Medien
    Thermo-optical nonlinearity of GaN grown by metalorganic chemical- vapor deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 22-24 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A study of thermo-optical coefficient (dn/dT) of GaN using spectroscopic ellipsometry is made, and a large thermo-optical nonlinearity near band edge, which increases with increasing temperature, has been observed. Kramers–Kronig transformation has been used to verify our results and a qualitative consistency has been obtained. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.121710
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  • 2
    Digitale Medien
    Digitale Medien
    Energy-gap narrowing in a current injected InGaN/AlGaN surface light emitting diode (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2424-2426 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The emission spectrum of a current injected InGaN/AlGaN surface emitting diode has been investigated. A clear redshift of the low energy edge with increasing injected current has been observed, and is attributed to the many body effects. The carrier density and band gap narrowing are obtained by fitting the line shape of the emission spectrum, using Landsberg model which includes many body effects. A redshift of around 92 meV of the low energy edge is obtained as injected current increases from 400 to 4000 mA. The band gap change can be described well in proportion to the 1/3 power of the carrier density, which is just suggested by the exchange energy of electron–electron, and hole–hole interactions. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.120081
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  • 3
    Digitale Medien
    Digitale Medien
    Schottky diodes of Ni/Au on n-GaN grown on sapphire and SiC substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2567-2569 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: GaN films were grown on sapphire and SiC substrates. The crystal qualities of GaN films were investigated by photoluminescence, atomic force microscopy, and electron-beam-induced current measurements, etc. It was found that the crystal quality of GaN on SiC is better than the one on sapphire. Ni/Au Schottky contacts were formed on the both samples. The electronic characteristics were obtained by current–voltage and capacitance–voltage measurements. Schottky diodes on sapphire substrate show breakdown voltage of −80 V. While for SiC substrate, the strong breakdown was not observed even at −100 V. The reverse leakage current of diodes based on SiC is over three orders of magnitude lower than that of sapphire substrate when the reverse voltage is above 50 V, which is due to the presence of low dislocation density and high thermal conductivity. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1410355
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  • 4
    Digitale Medien
    Digitale Medien
    Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2195-2197 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Si delta-doped GaN has been grown by metalorganic chemical-vapor deposition. A very high peak density and narrow full width at half maximum (FWHM) of the carrier profile are obtained. It is found that the peak carrier density of Si delta doping increases with the doping time and SiH4 flow rate, while the FWHM of the carrier profile decreases with both increasing doping time and SiH4 flow rate. Some saturation in the carrier density has also been observed for relatively longer doping time. Except for a broadened carrier distribution in GaN induced by Si diffusion due to high growth temperature, the Si delta-doping properties in GaN are found to be similar to those of GaAs. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1314883
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  • 5
    Digitale Medien
    Digitale Medien
    Numerical simulation of a free-burning argon arc with copper evaporation from the anode (1990)
    Springer
    Plasma chemistry and plasma processing 10 (1990), S. 87-98 
    Details
    ISSN: 1572-8986
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Technik allgemein
    Notizen: Abstract A free-burning, high-intensity argon arc at atmospheric pressure was modeled during the evaporation of copper vapor from the anode to study the impact of the vapor to the entire plasma region. A uniform and a Gaussian radial velocity distribution are adopted for the copper vapor at the anode boundary with a net mass flow rate known from the experiment. The effect of both velocity distributions on the temperature, mass flow, current flow, and Cu concentration was studied for the entire plasma region. The cathode region is not affected by the evaporated copper, and the Cu vapor concentration in the arc core is negligible.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01460449
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  • 6
    Digitale Medien
    Digitale Medien
    The induction plasma chemical reactor: Part I. Equilibrium model (1990)
    Springer
    Plasma chemistry and plasma processing 10 (1990), S. 133-150 
    Details
    ISSN: 1572-8986
    Schlagwort(e): Induction plasma ; modeling ; chemical equilibrium ; silicon nitride synthesis
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Technik allgemein
    Notizen: Abstract A mathematical model is presented for the numerical simulation of the flow, temperature, and concentration fields in an rf plasma chemical reactor. The simulation is performed assuming chemical equilibrium. The extent of validity of this assumption is discussed. The system considered is the reaction of SiCl4 and NH3 for the production of Si3N4.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01460452
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  • 7
    Digitale Medien
    Digitale Medien
    The induction plasma chemical reactor: Part II. Kinetic model (1990)
    Springer
    Plasma chemistry and plasma processing 10 (1990), S. 151-166 
    Details
    ISSN: 1572-8986
    Schlagwort(e): Induction plasma ; modeling ; chemical kinetics ; dissociation of silicon tetrachloride
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Chemie und Pharmazie , Maschinenbau , Technik allgemein
    Notizen: Abstract A kinetic model has been developed for the prediction of the concentration gelds in an rf plasma reactor. A sample calculation for a SiCl4/H2 system is then performed. The model considers the mixing processes along with the kinetics of seven reactions involving the decomposition of these reactants. The results obtained are compared to those assuming chemical equilibrium. The predictions indicate that an equilibrium assumption will result in lower predicted temperature fields in the reactor. Furthermore, for the chemical system considered here, while differences exist between the concentration fields obtained by the two models, the differences are not substantial.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01460453
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  • 8
    Digitale Medien
    Digitale Medien
    Design and development of the d.c. plasma reactor for the synthesis of ultrafine powders (1992)
    Springer
    Journal of materials science 27 (1992), S. 2211-2217 
    Details
    ISSN: 1573-4803
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau
    Notizen: Abstract After analysing different plasma processes, we have designed and developed a 14kW d.c. plasma unit for generating ultrafine powders. Experiments to characterize the torch demonstrated that it is possible to operate the plasma unit over a wide range of conditions without losing its discharge stability. Temperature distribution profiles were determined radially as well as axially in the reaction chamber, and the efficiency of the torch was calculated for a fixed power input. Ultrafine powders of Ta, Mo and W were synthesized, and size and size distribution obtained. The particle size was found to be 0.03–0.1 μm, with a perfect spherical shape. The analysis of the samples is discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01117939
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  • 9
    Digitale Medien
    Digitale Medien
    A d.c. plasma-fluidized bed reactor for the production of calcium carbide (1995)
    Springer
    Journal of materials science 30 (1995), S. 2412-2419 
    Details
    ISSN: 1573-4803
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau
    Notizen: Abstract Up to now, calcium carbide has been produced on an industrial scale exclusively by the electrothermal method. Very high-temperature operation should be used, and this results in high capital, and some serious environmental problems if open or half-covered furnaces are used. A chemical equilibrium calculation conducted in this laboratory shows that if we add a certain amount of argon into the precursors, the required temperature for chemical equilibrium of the system can be reduced to 1400–1500 °C. We have been guided to develop a d.c. plasma-heated fluidized bed for the preparation of calcium carbide. Preliminary experiments include cold fluidization, measurement of heat-transfer coefficient, production of calcium carbide and measurement of conversion rate. It was found that 84.3% conversion is reached in an argon atmosphere under atmospheric pressure and an operation temperature of 1400–1450 °C. X-ray diffraction analysis and SEM show that the generated calcium carbide is of good quality.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01184594
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  • 10
    Digitale Medien
    Digitale Medien
    Synthesis of ultra-fine SiC powders in a d.c. plasma reactor (1993)
    Springer
    Journal of materials science 28 (1993), S. 659-668 
    Details
    ISSN: 1573-4803
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau
    Notizen: Abstract Synthesis of SiC powder in a 15 kW d.c. plasma reactor by using the reaction systems of SiCl4+CH4 and CH3SiCl3+CH4 was studied. The powder produced was characterized by X-ray diffraction and electron microscopy (SEM and TEM). Specific surface area was determined by the BET method using a sorptograph. The oxygen content was analysed by thermogravimetric method. Powder characteristics with respect to plasma conditions were analysed. The SiC powder generated was sintered in the presence of boron and carbide.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01151242
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