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  • 11
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have succeeded in preparing c-axis oriented high-Jc YBa2Cu3Oy films on MgO(100) substrate by the liquid phase epitaxy (LPE) technique. The growth rate was typically about 2 μm/min, which was 10–102 times larger than that by ordinary vapor growth techniques. The film thickness ranged 10–50 μm by choosing the dipping time. The Tc of the best film exceeded 88 K after oxygen annealing, and the transport Jc was 1.1×105 A/cm2 at 77 K and 0 T. In-field Jc's at 77 K and 1.5 T were 2.8×104 A/cm2 and 2.0×104 A/cm2 for the B⊥ab plane and B(parallel)ab plane, respectively. In addition, the peak effect of Jc was observed at several tesla for B(parallel)ab plane geometry. Based on the microstructure observed by high resolution transmission electron microscopy, the relevant peak effect is considered to be caused by stacking faults which act as a field induced pinning center.
    Materialart: Digitale Medien
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  • 12
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3551-3553 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Cubic boron nitride (c-BN) thin films synthesized by the ion-plating method were examined by high-resolution electron microscopy. It was found that the {0002} planes of hexagonal boron nitride (h-BN) at the boundaries of c-BN grains preferred to nucleate almost parallel to {111} planes of c-BN. Cross-sectional observation in the initial stage of growth showed that the c-BN can grow on top of the prismatic planes and the {0001} basal planes of h-BN, keeping the parallelism of the (111)c-BN to (0001)h-BN. A few degrees deviation (∼4°) between h-BN {0002} planes and c-BN {111} planes was frequently found in the film. The nucleation mechanism of c-BN was discussed analogous to that of diamond on graphite. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
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  • 13
    Digitale Medien
    Digitale Medien
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2002-2004 
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The a/b-axis oriented YBa2Cu3O7−y (YBCO) films were fabricated by liquid phase epitaxy (LPE) on NdGaO3 (110) single-crystalline substrates using a modified top-seeded solution growth method. The x-ray diffraction measurement, and transmission electron microscopic observation showed the epitaxial growth of YBCO film on the substrate. Scanning electron microscopic observation revealed the epitaxy of YBCO on the substrate and an initial growth mechanism of a/b-axis oriented YBCO film by LPE. The film growth consists of the following stages; (1) nucleation and island growth, (2) lateral growth of island, and (3) layer formation due to coalescence of island. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
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  • 14
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    ISSN: 1551-2916
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Maschinenbau , Physik
    Notizen: As in fiber-reinforced composites, debonding, which allows the elongated reinforcing grains to at least partially separate from the rest of the matrix, is a critical part of the toughening mechanism in self-reinforced silicon nitrides. In situ high-resolution electron microscopy observations reveal that the debonding path can occur at the interface between the grains and continuous nanometer-thick intergranular film (IGF) or within the IGF depending on the film's composition, which varies with the yttria to alumina ratio in the fixed total amount of sintering additives. Theoretical calculations reveal that the bonding across the interface can be weakened by decreasing the Al and O content (z) of the epitaxial Si6–ZAlZOZN8–Z layer on the grains, which is consistent with the observations of interfacial debonding. However, evidence also indicates that weakening of the amorphous network of the IGF occurs with increase in yttrium levels that can be responsible for the observed mixture of debonding by crack propagation along the interface and within the IGF when the sintering additive contains the highest yttria:alumina ratio.
    Materialart: Digitale Medien
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  • 15
    Digitale Medien
    Digitale Medien
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    ISSN: 1551-2916
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Maschinenbau , Physik
    Notizen: The microstructures of fine-grained β-SiC materials with α-SiC seeds annealed either with or without uniaxial pressure at 1900°C for 4 h in an argon atmosphere were investigated using analytical electron microscopy and high-resolution electron microscopy (HREM). An applied annealing pressure can greatly retard phase transformation and grain growth. The material annealed with pressure consisted of fine grains with β-SiC as a major phase. In contrast, the microstructure in the material annealed without pressure consisted of elongated grains with half α-SiC. Energy-dispersive X-ray analysis showed no differences in the amount of segregation of aluminum and oxygen atoms at grain boundaries, but did show a significant difference in the segregation of yttrium atoms at grain boundaries along SiC grains for the two materials. The increased segregation of yttrium ions at grain boundaries caused by the applied pressure might be the reason for the retarded phase transformation and grain growth. HREM showed a thin secondary phase of 1 nm at the grain boundary interface for both materials. The development of a composite grain consisting of a mixture of β/α polytypes during annealing was a feature common to both materials. The possible mechanisms for grain growth and phase transformation are discussed.
    Materialart: Digitale Medien
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  • 16
    Digitale Medien
    Digitale Medien
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 81 (1998), S. 0 
    ISSN: 1551-2916
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Maschinenbau , Physik
    Notizen: Charge-collection (CC) current was measured at a single grain boundary, which exhibited positive temperature coefficient of resistivity (PTCR) effects, in 0.1-mol%-Nb-doped BaTiO3. The CC current systematically reversed across the grain boundary above the Curie point, which indicated the presence of a double Schottky barrier (DSB) at the grain boundary. In contrast, the CC current was constant across the grain boundary below the Curie temperature. The result obtained from the CC current measurement agrees with the classical DSB model in donor-doped BaTiO3, indicating the PTCR effects.
    Materialart: Digitale Medien
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  • 17
    Digitale Medien
    Digitale Medien
    Oxford, UK : Blackwell Science Inc
    Journal of the American Ceramic Society 88 (2005), S. 0 
    ISSN: 1551-2916
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Maschinenbau , Physik
    Notizen: Compression tests were conducted at 1400°C in air for undoped and Si-doped yttria-stabilized zirconia (YSZ) bicrystals with the same orientation relationship (Σ=5, [001]/{210} grain boundary). It was found that the macroscopic grain-boundary slidings are observed during the deformation in both undoped and doped bicrystals, and the sliding displacements increase almost linearly with increasing total displacements. It is distinctly demonstrated that the Si-doped bicrystal exhibits a sliding displacement that is a few times larger than the undoped bicrystal. In addition, the total strain of the Si-doped bicrystal at a failure is much larger than that of the undoped bicrystal. It can be stated that Si doping in YSZ not only enhances the grain-boundary sliding but also suppresses its failure.
    Materialart: Digitale Medien
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  • 18
    Digitale Medien
    Digitale Medien
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 85 (2002), S. 0 
    ISSN: 1551-2916
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Maschinenbau , Physik
    Notizen: Current-voltage (I–V) characteristics across (0001) twist boundaries with various misorientation angles were investigated in undoped ZnO bicrystals fabricated by a hot-joining technique. It was confirmed by high-resolution transmission electron microscopy that the boundaries were perfectly joined without intergranular phase. None of the bicrystals prepared in this study exhibited nonlinear I–V characteristics irrespective of coherency at the boundaries. Therefore, grain-boundary atomic configuration had no relation to the formation of double Schottky barriers at the (0001) twist boundaries in ZnO.
    Materialart: Digitale Medien
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  • 19
    Digitale Medien
    Digitale Medien
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 84 (2001), S. 0 
    ISSN: 1551-2916
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Maschinenbau , Physik
    Notizen: The superplastic characteristics of various cation-doped yttria-stabilized tetragonal zirconia polycrystals (Y-TZP) were examined. For 1 mol% cation doping the true stress of Y-TZP is very dependent on the ionic radii of the doped cations; for instance, smaller cation radii give rise to lower true stress when compared with the other compositions for the same grain size, strain rate, and testing temperature. The altered true stress level must be due to the change in diffusivity of the accommodation process for grain boundary sliding caused by the addition of cations in ZrO2. The strain to failure of the doped zirconia is affected by both ionic radius and valence of the dopant cations.
    Materialart: Digitale Medien
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  • 20
    Digitale Medien
    Digitale Medien
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 83 (2000), S. 0 
    ISSN: 1551-2916
    Quelle: Blackwell Publishing Journal Backfiles 1879-2005
    Thema: Maschinenbau , Physik
    Notizen: Current–voltage (I–V) characteristics across Σ1 boundaries of Nb-doped SrTiO3 bicrystals were investigated with a special interest in the effect of an impurity ion, cobalt. The Σ1 boundary with cobalt ions was fabricated by hot-joining technique after evaporating metallic cobalt onto the (001) plane used for a contact plane. High-resolution transmission electron microscopy (HREM) study associated with X-ray energy dispersive spectroscopy (EDS) revealed that cobalt solved and distributed around the Σ1 boundary which was perfectly joined without any second films. It was found that the Σ1 boundary with cobalt ions exhibited a nonlinear I–V relationship while the Σ1 boundary without cobalt ions showed a linear I–V relationship. This result indicates that the presence of cobalt itself at the boundary can form a potential barrier irrespective of grain boundary coherency.
    Materialart: Digitale Medien
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