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A Schottky barrier study of HBr magnetron enhanced reactive ion etching damage in silicon (1991)

Nakagawa, O. S. ; Ashok, S. ; Kruger, J. K.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 2057-2061

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Hydrogen bromide (HBr) magnetron enhanced reactive ion etching (MERIE) damage on crystalline silicon was investigated by studying the electrical properties of subsequently formed Schottky diodes. After removal of 4000 A(ring) of silicon from p-type and n-type Si wafers in a MERIE system using HBr chemistry, Schottky diodes were formed on the surface and their electrical characteristics evaluated to assess the influence of ion bombardment. In p-type Si hydrogen permeation was found to be the dominant factor of the RIE damage causing deactivation of dopants and Schottky barrier height enhancement. However, such effects can be removed by anneal at 180 °C. On the other hand, no significant changes were observed in n-Si, with or without anneals at various temperatures. In both cases manifestation of ion-bombardment damage was absent, in contrast to what has generally been seen in RIE systems using conventional gas chemistry.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.348731

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Digitale Medien

Ultrahigh Au/p-GaAs Schottky barriers due to plasma hydrogenation (1990)

Ashok, S. ; Wang, Y. G. ; Nakagawa, O. S.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 57 (1990), S. 1560-1562