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Ultrahigh Au/p-GaAs Schottky barriers due to plasma hydrogenation (1990)

Ashok, S. ; Wang, Y. G. ; Nakagawa, O. S.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 57 (1990), S. 1560-1562

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: GaAs surface modification caused by rf plasma hydrogenation has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. While the Schottky barrier height on n-GaAs is found to reduce slightly, exceptionally high barriers have been seen for p-GaAs. The effective barrier height of Au/p-GaAs diodes increases from 0.35 eV for unhydrogenated control to 0.84 eV with plasma hydrogenation.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.103353

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