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Ultraviolet light assisted oxygenation process for submicron YBa2Cu3O7−δ thin film devices (2002)

Herbstritt, F. ; Kemen, T. ; Marx, A. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 91 (2002), S. 5411-5418

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have successfully fabricated superconducting nanobridges and grain-boundary junctions from epitaxial YBa2Cu3O7−δ thin films with thickness between 20 and 30 nm and width down to ∼100 nm. The patterning process turned out to severely deteriorate the transport properties resulting in structural damage, corrosion, and oxygen loss. The most crucial steps are the baking procedure used to cure the electron beam resist, the resist development, and the ion beam etching process. By optimizing these steps and applying a suitable post-treatment procedure a significant enhancement of the sample quality could be achieved. An ultraviolet light assisted oxygenation procedure after the patterning process enabled us to achieve superconducting transition temperatures between 80 and 87 K and critical current densities at 4.2 K up to 4×107 A cm−2 for the nanobridges and 5×103–2×105 A cm−2 for the grain boundary junctions. At 4.2 K junctions with width down to 100 nm corresponding to a junction area down to 2.3×10−3 μm2 showed superconductivity. © 2002 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1459599

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Digitale Medien

Transport and noise characteristics of submicron high-temperature superconductor grain-boundary junctions (2001)

Herbstritt, F. ; Kemen, T.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 78 (2001), S. 955-957

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We have investigated the transport and noise properties of submicron YBa2Cu3O7−δ bicrystal grain-boundary junctions prepared using electron beam lithography. The junctions show an increased conductance for low voltages reminiscent of Josephson junctions having a barrier with high transmissivity. The voltage noise spectra are dominated by a few Lorentzian components. At low temperatures clear two-level random telegraph switching signals are observable in the voltage versus time traces. We have investigated the temperature and voltage dependence of individual fluctuators both from statistical analysis of voltage versus time traces and from fits to noise spectra. A transition from tunneling to thermally activated behavior of individual fluctuators was clearly observed. The experimental results support the model of charge carrier traps in the barrier region. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1343847

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