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  • 11
    Electronic Resource
    Electronic Resource
    Comparison of high quality (111)B and (100) AlGaAs grown by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2394-2396 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: State-of-the-art quality Al0.3Ga0.7As was achieved on both (111)B and (100) GaAs by molecular beam epitaxy. Low-temperature photoluminescence linewidths of 2.9 and 2.4 meV were obtained for (111)B and (100) Al0.3Ga0.7As, grown at 650 and 700 °C, respectively, with nearly equivalent integrated luminescence intensity. This is the narrowest linewidth ever reported for (111) AlGaAs. The low growth temperature and high material quality of (111)B Al0.3Ga0.7As is expected to be an important factor to the future development of both electronic and optical heterostructure devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106409
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  • 12
    Electronic Resource
    Electronic Resource
    Spontaneous formation of Al rich and Ga rich AlxGa1−xAs/AlyGa1−yAs superlattice and strong enhancement of optical properties (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1921-1923 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Long range composition ordering and spontaneous formation of Al rich and Ga rich AlxGa1−xAs/AlyGa1−yAs superlattice were demonstrated. This was observed by cross-sectional transmission electron microscopy (TEM) in a 280 A(ring) Al0.4GaAs quantum well laser diode heterostructure with Al0.7GaAs barriers grown on (111)B GaAs substrates. On the contrary, none of above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. More evidence is shown in the (111)B Al0.7GaAs barriers which were disordered due to a high growth temperature and did not show any superstructure. 10 K photoluminescence was shown with 32 meV redshift and a 12-times peak intensity enhancement in (111)B orientation. © 1994 American Institue of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112817
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  • 13
    Electronic Resource
    Electronic Resource
    Strong luminescence intensities in Al0.22Ga0.78As grown on misoriented (111)B GaAs (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2381-2383 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strong enhancement in the luminescence intensity is observed in Al0.22Ga0.78As epitaxial layers grown on misoriented (111)B GaAs at 630 °C. For 3° misorientation, the luminescence intensity is almost 10 times that of (100) layers and the luminescence efficiency is an order of magnitude stronger than that of (100). (100) Al0.4Ga0.6As/GaAs quantum well laser diode structures grown under identical conditions with a low threshold current density of 150 A/cm2 are indications of excellent AlGaAs material quality. Electron mobility for 3° misoriented (111) Al0.25Ga0.75As is about 10% higher than that for side-by-side grown (100). The strong luminescence associated with a large red shift of 90 meV, the 10% mobility enhancement, and wirelike structure shown in transmission electron microscopy are indicative of the natural formation of quantized structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110481
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  • 14
    Electronic Resource
    Electronic Resource
    High quality (111)B GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a GaAs/InGaAs/GaAs quantum well (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1899-1901 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful growth of high quality molecular beam epitaxy (MBE) GaAs, AlGaAs, AlGaAs/GaAs modulation doped heterostructures and a GaAs/InGaAs/GaAs quantum well on GaAs (111)B substrates. Modulation doped heterostructures show a 77 K mobility of 145 500 cm2/V s with a sheet density of 5.0×1011 cm−2. Photoluminescence of (111)B GaAs indicates a lower carbon incorporation than achieved on (100) substrates. The low growth temperature and high material quality obtainable in (111)B growth will provide advantages for laser diodes and heterostructure field effect transistors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106182
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  • 15
    Electronic Resource
    Electronic Resource
    Spontaneously formed long-range Al-rich and Ga-rich AlxGa1−xAs/AlyGa1−yAs superlattice and optical properties enhancement in (111)A AlGaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3617-3619 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spontaneously formed long-range Al-rich and Ga-rich AlxGa1−xAs/AlyGa1−yAs superlattice in (111)A was demonstrated. This was observed by cross-sectional transmission electron microscopy (TEM) in 0.75 μm Al0.30Ga0.70As grown on (111)A GaAs substrates at 640 °C. In contrast, none of the above superstructure was observed by TEM on a side-by-side grown (100) oriented substrate. 15 K photoluminescence (PL) showed a 31 meV redshift and six times peak intensity enhancement in layers grown on (111)A substrates to that on (100). A reduced long-range compositional modulation can be achieved by growth at higher temperatures and is shown in the finer and moderately modulating (111)A Al0.40Ga0.60As grown at 700 °C. A 15 K PL linewidth of 17 meV was achieved in 700 °C grown (111)A A0.40Ga0.60As that is the narrowest reported linewidth for (111)A AlGaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115336
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  • 16
    Electronic Resource
    Electronic Resource
    Two-dimensional arsenic precipitation by In delta doping during low temperature molecular beam epitaxy growth of GaAs or AlGaAs (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2517-2519 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low temperature (LT) GaAs delta doped with In and Al have been grown by molecular beam epitaxy and annealed at 600–900 °C for 10 min. As precipitates have been observed to form preferentially on In doping planes while depleting on the Al planes. Similar As precipitates in In-doped LT-Al0.25Ga0.75As are 50% more efficient than that of GaAs. The accumulation or depletion of As precipitates in two-dimensional planes in LT materials using isoelectronic impurities show that the phenomena is not directly related to the electronic properties of dopant impurities and therefore has many device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111559
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  • 17
    Electronic Resource
    Electronic Resource
    Strong accumulation of As precipitates in low temperature InGaAs quantum wells grown by molecular beam epitaxy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1546-1548 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low temperature InGaAs strained quantum wells have been grown by molecular beam epitaxy and annealed at 600–900 °C for 10 min. For an optimized annealing condition, arsenic precipitates can be successfully confined in the InGaAs wells and completely depleted in the GaAs barriers. The strong accumulation of As precipitates shows that the phenomena are not due to the strain effect but may be explained by the difference of interfacial energy between precipitate and matrix. The ability to control the As precipitates into two-dimensional quantum wells in LT materials has unique applications in a wide variety of devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111861
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  • 18
    Electronic Resource
    Electronic Resource
    Picosecond photoresponse of carriers in Si ion-implanted Si (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 653-655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Picosecond photoresponse of carriers in Si ion-implanted Si samples has been measured using femtosecond transient reflectivity measurement. A threshold peak implant dose of 1016 cm −2 is required to achieve picosecond carrier lifetime. At this dosage, carrier lifetimes of 0.9 and 1.4 ps are measured for the as-implanted and 400 °C annealed Si substrates, respectively. The increase in carrier lifetime upon annealing is attributed to the reduction in the concentration of trap and recombination centers. Sheet resistance also shows a strong dependence on the annealing temperature. An eightfold increase in sheet resistance is obtained for annealed samples, and a reduction in hopping conduction, manifested by the e−1/T temperature dependence, may be responsible for the increase in resistance. Further evidence of decreasing hopping conduction can be also observed from the more than two orders of magnitude in reduction of sheet resistance as the peak dosage decreases from 1016 to 1014 cm−2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117795
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  • 19
    Electronic Resource
    Electronic Resource
    Microstructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperatures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 397-399 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-sectional transmission electron microscopy (TEM) and femtosecond (fs) reflectivity are used to study (Ga,As) compound grown at low temperatures from 160 to 70 °C. A columnar polycrystalline GaAs is observed for samples grown at 160 °C while it appears amorphous for samples grown at temperatures below 120 °C. The successful growth of amorphous (Ga,As) at 70 °C, instead of a mixture of metallic Ga droplets and As solids, suggests that the decomposition of As4 molecules may be catalyzed by the surface Ga. Upon annealing, all samples become polycrystalline before epitaxial solid state regrowth eventually dominates and the whole sample becomes single crystal for long enough annealing. Carrier lifetime of 230 fs is measured for the as-grown amorphous sample. For the annealed sample, the photoresponse exhibits a fast initial decay of 120 fs and a much slower secondary decay of 33 ps. The initial decay is attributed to the formation of fine polycrystalline grains (∼500 A(ring) in size) whose grain boundaries provide effective carrier traps and recombination centers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118073
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  • 20
    Electronic Resource
    Electronic Resource
    High quality Al(Ga)As/GaAs/Al(Ga)As quantum wells grown on (111)A GaAs substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3437-3439 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of high quality molecular beam epitaxy (MBE) AlGaAs, AlGaAs/GaAs/AlGaAs, and AlAs/GaAs/AlAs multiple quantum wells (MQWs) on (111)A GaAs substrates. For (111)A AlGaAs/GaAs/AlGaAs MQWs, there is no detectable photoluminescence (PL) at a growth temperature of 640 °C, and narrow PL linewidth can only be obtained at growth temperatures higher than 680 °C. A PL linewidth of 13.8 meV is measured at the growth temperature of 720 °C. To understand such growth temperature dependence of (111)A MQWs, we have investigated the material quality of (111)A AlGaAs at different growth temperatures. The strong PL integrated intensity of 640 °C grown (111)A AlGaAs indicates good material quality and a low concentration of non-radiative recombination centers. However, the broad PL linewidth of 640 °C grown (111)A AlGaAs indicates the strong compositional modulation and a rough growth front. We have used AlAs instead of AlGaAs in order to reduce the compositional modulation and smooth the interface. A PL linewidth of 13.4 meV is measured for 640 °C grown (111)A AlAs/GaAs/AlAs MQWs, which is the narrowest value for (111)A MQWs. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115785
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