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  • 11
    Electronic Resource
    Electronic Resource
    Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1905-1907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A mixture of 500 ppm CCl4 in H2 has been used to grow heavily doped p-type GaAs by low-pressure metalorganic chemical vapor deposition with TMGa and AsH3 as the group III and V sources, respectively. Carbon acceptor concentrations between 1×1016 and 1×1019 cm−3 were obtained. In addition, abrupt carbon-doping profiles were achieved with no noticeable memory effects. Carrier concentration was studied as a function of CCl4 flow, V/III ratio, growth temperature, and growth rate using electrochemical capacitance-voltage profiling. Carbon incorporation was found to depend on CCl4 flow, V/III ratio, and growth temperature. Carbon incorporation had no dependence on the growth rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101237
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  • 12
    Electronic Resource
    Electronic Resource
    Internal photoemission and band discontinuities at Ga0.47In0.53As-InP heterojunctions (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1457-1459 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Internal photoemission has been observed in the spectral response of specially designed Ga0.47In0.53As-InP p+N− heterojunction photodiodes. Power-law fits to the internal photoemission as a function of photon energy allow precise determination of threshold energies from which the conduction-band discontinuity is easily and accurately deduced to be ΔEc=203±15 meV at room temperature. These measurements have been performed at temperatures from 135 to 297 K. The temperature dependence of ΔEc is described by ∂(ΔEc)/∂T=−0.2±0.1 meV/K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100696
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  • 13
    Electronic Resource
    Electronic Resource
    Generation of an anomalous hole trap in GaAs by As overpressure annealing (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1077-1079 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep levels in high-purity n-type molecular beam epitaxy (MBE) GaAs and in undoped n-type metalorganic chemical vapor deposition (MOCVD) GaAs samples annealed with various As overpressures were investigated using constant capacitance deep level transient spectroscopy on evaporated Au Schottky barrier diodes. Anomalous hole traps, which could be measured because of a surface effect, were observed in all annealed samples. EL2 traps were created in the MBE material by the annealing, while the concentration of EL2 in the annealed MOCVD material was about the same as that before annealing. The effect of annealing on the other electron traps in these samples is also studied and reported.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99216
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  • 14
    Electronic Resource
    Electronic Resource
    Low-threshold buried-ridge II-VI laser diodes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2315-2317 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Blue-green (λ=511 nm) separate confinement laser structures based on lattice-matched MgZnSSe-ZnSSe-CdZnSe have been grown by molecular beam epitaxy. Wide stripe gain-guided devices have been fabricated from several such wafers. These devices exhibit room-temperature pulsed threshold current densities as low as 630 A/cm2 and threshold voltages less than 9 V. Using a novel self-aligned process that results in a planar surface, buried-ridge laser diodes have also been fabricated. These devices have demonstrated room-temperature threshold currents as low as 2.5 mA, which is more than a factor of 50 lower than that of any previously reported II-VI laser diode. Room-temperature operation at duty factors up to 50% has been demonstrated. The far-field patterns from these devices indicate single lateral mode operation, suitable for diffraction-limited applications, such as optical data storage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110511
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  • 15
    Electronic Resource
    Electronic Resource
    Separate confinement electroabsorption modulator for 633 nm light (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2054-2056 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel guided-wave electroabsorption modulator, based on separate confinement of the optical modes and the applied electric field, is described. When demonstrated for 633 nm light using AlGaAs waveguide technology, the concept provides low insertion loss and extinction ratios as great as 100:1 (20 dB) while operating at less than 10 V. Other advantages include polarization insensitivity and low capacitance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107087
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  • 16
    Electronic Resource
    Electronic Resource
    Graded InGaP Schottky diodes on Si-doped InP (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1839-1841 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A compositionally graded InGaP alloy layer grown on a Si-doped InP layer was used to enhance the Schottky barrier height of InP. The fabricated diodes were characterized by Auger depth profiling, variable temperature I-V, capacitance-voltage (C-V), and internal photoemission. Rectification behavior with a low leakage current was achieved (J=8.3×10−7 A/cm2 at −1V). An enhanced Schottky barrier height of 1.18 eV was measured. The large barrier height permitted a reliable C-V profile of a moderately doped InP layer (7×1017 cm−3).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107181
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  • 17
    Electronic Resource
    Electronic Resource
    ZnSe-ZnSSe electro-optic waveguide modulators (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3228-3229 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rib waveguides have been fabricated in the ZnSe-ZnSSe material system, grown by molecular beam epitaxy on GaAs substrates. Using Schottky barrier contacts, rib-waveguide optical phase modulators have been demonstrated and the strength of the linear electro-optic (Pockels) effect has been measured. A change in the index of refraction of Δn/ΔF=±1.7×10−9 cm/V has been attained for 633 nm light. This translates to a maximum Δn of 0.0008. Rib waveguides with losses as low as 0.66 cm−1 have been measured.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105740
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  • 18
    Electronic Resource
    Electronic Resource
    Blue-green laser diodes (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1272-1274 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first laser diodes fabricated from wide-band-gap II-VI semiconductors are demonstrated. These devices emit coherent light at a wavelength of 490 nm from a ZnSe-based single-quantum-well structure under pulsed current injection at 77 K. This is the shortest wavelength ever generated by a semiconductor laser diode.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105472
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  • 19
    Electronic Resource
    Electronic Resource
    〈100〉 dark line defect in II-VI blue-green light emitters (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 801-803 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out a microstructural study of the 〈100〉 dark line defect that forms during degradation of II-VI blue-green light emitters. We find that these defects lie in or near the ZnCdSe quantum well and do not correspond to a readily observable dislocation network in transmission electron microscopy studies. We speculate that they may consist of point defects or small point defect complexes. We have also carried out estimates of point defect migration rates during device operation that can give rise to such degradation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112234
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  • 20
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth of CdZnS using elemental sources (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2935-2937 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first molecular beam epitaxial (MBE) growth of CdZnS on (100) GaAs substrates using elemental Zn, Cd, and S sources. Single crystal cubic CdZnS layers lattice matched to GaAs have been successfully prepared. The competition in incorporation between Cd and Zn under different sulfur flux conditions is investigated. Under appropriate growth conditions, the Cd1−xZnxS composition is directly related only to the ratio of the group II beam equivalent pressures. The background sulfur in the MBE growth chamber is found to etch the freshly thermally cleaned GaAs substrates and generate high density of pits on the surfaces. Methods to prevent the sulfur etching are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110278
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