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  • 11
    Electronic Resource
    Electronic Resource
    Acute onset vesiculo-bullous dermatomyositis associated with massive mucosal necrosis of the intestines (2002)
    Oxford, UK : Blackwell Science Ltd
    Clinical and experimental dermatology 27 (2002), S. 0 
    Details
    ISSN: 1365-2230
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2230.2002.01102_5.x
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  • 12
    Electronic Resource
    Electronic Resource
    A study of Franz–Keldysh oscillations of GaAs/Si/GaAs and AlAs/Si/AlAs heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3616-3619 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have carried out a detailed study of Franz–Keldysh oscillations observed in the photoreflectance spectra of molecular beam epitaxy grown GaAs/Si/GaAs and AlAs/Si/AlAs heterostructures with a Si nominal thickness of two monolayers. The oscillations in the photoreflectance spectra were due to internal electric fields generated by graded p-n junctions created by Si diffusion. The data were analyzed employing the asymptotic Franz–Keldysh theory. It is concluded that different contributions from degenerate heavy and light hole bands, to transitions around the Γ point of the Brillouin zone, must be expected for different heterostructures depending upon the particular characteristics of the internal electric fields present in the sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357422
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  • 13
    Electronic Resource
    Electronic Resource
    Solid phase epitaxial growth of GaAs on Si (111) (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1664-1666 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A continuous GaAs film was successfully grown on Si(111) at the initial stage (20 A(ring) growth thickness) by solid phase epitaxial growth. This growth suppressed the island formation observed with direct growth of GaAs on Si. The GaAs(111)A was obtained for the first time on Si(111) with an As prelayer deposited at 20 °C and 350 °C. The GaAs(111)B was also grown on Si(111) with an As prelayer deposited at 580 °C and 700 °C. The polarity of the (111) GaAs epitaxial film depends on the substrate temperature at which the As prelayer is deposited on Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103110
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  • 14
    Electronic Resource
    Electronic Resource
    a-axis oriented epitaxial YBa2Cu3O7−y/PrBa2Cu3−xNbxO7−z multistructures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1576-1578 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using the pulsed laser deposition technique, we have successfully prepared a-axis oriented PrBa2Cu3−xNbxO7−z (PBCNO)(x=0–1.5) films and YBa2Cu3O7−x (YBCO)/PBCNO heterorepitaxial multilayer structures. For the PBCNO films, the resistivity showed semiconducting behavior at all Nb substitution levels investigated. The resistivity increased with increasing Nb content, reaching a value of 104 Ω cm at 100 K for a 300-A(ring)-thick film with x=1.0. Using (100)SrTiO3 (STO) as a substrate, the following multilayer structures were successfully formed: (100)PBCNO(x=1.0)/(100)YBCO/(100)PBCO//STO, (001) YBCO/(100)PBCNO(x=1.0)/(100)PBCO//STO, and (100)YBCO/(100)PBCO/(100)PBCNO(x=1.0)/(100)PBCO//STO. The bottom and top YBCO layers in the (100)YBCO/(100)PBCO/(100)PBCNO/(100)PBCO/(100)YBCO//STO structure showed superconducting transition temperatures (zero resistance) of 82 and 83 K, respectively. The interlayer resistivity of the 200-A(ring)-thick PBCNO(x=1) interlayer was as high as 105 Ω cm at 30 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110809
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  • 15
    Electronic Resource
    Electronic Resource
    Ge segregation and its suppression in GaAs epilayers grown on Ge(111) substrate (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1216-1218 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interdiffusion of the compositional atoms was investigated at heterointerface between a GaAs epilayer and a Ge(111) substrate by secondary ion mass spectroscopy. When a thin AlAs layer is applied initially, diffusion of Ge into the GaAs epilayer was suppressed effectively. An abrupt heterointerface was successfully realized in relatively high temperature growth. The interdiffusion process at the AlAs-Ge heterointerface was clarified in high temperature growth, which was dominated by the temperature-assisted segregation of Ge atoms during the AlAs growth rather than thermal diffusion. The compositional diffusion of Al atoms into the GaAs epilayer was also observed, which was enhanced by the Ge segregation in the structure of GaAs/AlAs/Ge substrate grown at higher temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107599
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  • 16
    Electronic Resource
    Electronic Resource
    Suppression of threading dislocation generation in highly lattice mismatched heteroepitaxies by strained short-period superlattices (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2067-2069 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The threading dislocation density was remarkably reduced in highly lattice mismatched heteroepitaxies of the In0.5Ga0.5As/GaAs(001) and GaAs/GaP(001) systems. The two-dimensional growth mode was obtained even after the lattice relaxation by applying the strained short-period superlattices. The misfit dislocations aligned along the 〈110〉 direction were mainly generated at heterointerfaces. The misfit strain was relieved by the generation of the misfit dislocations in the absence of three-dimensional island growth. It was found that the generation of threading dislocations is effectively suppressed by introducing strained short-period superlattices at the initial growth stage of highly lattice mismatched heteroepitaxies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110594
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  • 17
    Electronic Resource
    Electronic Resource
    YBa2Cu3O7−y microbridges on Y2O3/yttria-stabilized zirconia/SiO2/Si(100) (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2709-2711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YBa2Cu3O7−y (YBCO) microbridges have been fabricated on a SiO2/Si substrate using Y2O3/YSZ (yttria-stabilized zirconia) buffer layer. Using polycrystalline silicon layer overlaid on oxidized Si(100) single crystal, the bridge is microprocessed by means of electron beam lithography and dry etching. The fabricated configuration serves as a mask for depositing YSZ and Y2O3 double buffer layers. The YBCO layer is deposited on the substrate by means of laser ablation deposition. The dimension of the bridge is 1.7 μm wide and 1.3 μm long. The microbridge junctions show a critical temperature of 86 K, and microwave-induced steps are observed indicating the presence of a Josephson junction-type behavior. The IcRn product is 0.5 mV at 30 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108483
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  • 18
    Electronic Resource
    Electronic Resource
    Initial growth mechanism of AlAs on Si(111) by molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2983-2985 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial growth mechanism of AlAs-on-Si(111) substrate was investigated. The suppression of three-dimensional growth was successfully realized at the initial growth stage, which is difficult in the growth of GaAs on Si. The initial growth process was clarified, in which the lattice relaxation proceeded gradually. It took about 30 ML to relax the lattice completely at the growth temperature of 400 °C. GaAs was grown in the two-dimensional mode on the completely relaxed AlAs on the Si(111) substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105819
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  • 19
    Electronic Resource
    Electronic Resource
    Superconductivity in Srn+1CunO2n+1+δ "infinite layer'' films induced by postgrowth annealing (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2283-2285 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconductivity with Tc(approximately-equal-to)25–45 K has been induced in films based on the "infinite layer'' structure though high temperature annealing in an oxygen ambient. The films had compositions Srn+1CunO2n+1+δ (n=3–9) and were previously grown by laser molecular beam epitaxy by periodic insertion of SrO defect layers into the SrCuO2 infinite layer matrix. A marked dependence on the cooling rate at the end of the postgrowth anneals indicates that preservation of a high temperature oxygen sublattice forms the key to enhancing the carrier density in these films, opposite to the situation with YBa2Cu3O7−δ . © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113193
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  • 20
    Electronic Resource
    Electronic Resource
    Epitaxial growth and properties of YBa2Cu3O7−y/LaSrGaO4/YBa2Cu3O7−y trilayer structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 779-781 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful synthesis of insulating LaSrGaO4(LSGO) thin films and YBa2Cu3O7−y(YBCO)/LSGO heteroepitaxial multilayer structures using a pulsed laser deposition technique. SrTiO3(STO)(100) was used as a substrate. The formation of highly c-axis oriented YBCO/LSGO/YBCO trilayer structures is demonstrated. Epitaxial YBCO films on LSGO//STO and LSGO/YBCO//STO have a zero resistance temperature of 88.5 and 88.3 K, respectively. Sandwich-type YBCO/LSGO/YBCO junctions were produced by a suitable patterning technique. The observed (dI/dV)-V characteristics exhibit a clear single gap structure (width ∼26 meV) at temperatures below 30 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111011
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