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  • 11
    Digitale Medien
    Digitale Medien
    Low-frequency resonant Raman scattering in AlAs-GaAs atomic-layer superlattices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1614-1616 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: New Raman lines are observed at the lowest ever frequencies in (AlAs)1(GaAs)n (n=1,2,3) atomic-layer superlattices under band-gap resonant excitation at low temperature. These lines appear in the 30–60 cm−1 region and their intensity is resonantly enhanced as the excitation photon energy approaches the photoluminescence peak energy. Analyses using the elastic continuum model indicate that these lines could be attributed to folded transverse acoustic phonons near the Brillouin-zone edge of the superlattices.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.99928
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  • 12
    Digitale Medien
    Digitale Medien
    Single quantum well photoluminescence in ZnSe/GaAs/AlGaAs grown by migration-enhanced epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1235-1237 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Photoluminescence in ZnSe/GaAs/Al0.4Ga0.6As single quantum well heterostructures is reported for the first time. These structures are grown by migration-enhanced epitaxy, resulting in flat and abrupt ZnSe/GaAs heterointerfaces. The quantum size effect is clearly observed. Photoluminescence intensities of ZnSe/GaAs/Al0.4Ga0.6As single quantum well structures are comparable to those of Al0.4Ga0.6As/GaAs/Al0.4Ga0.6As, indicating a reasonable quality of the ZnSe layer as well as the ZnSe/GaAs heterojunctions. From the GaAs well width dependence of photoluminescence wavelength, the conduction- and valence-band-edge discontinuities are estimated to be 0.03–0.05 eV and 1.21–1.23 eV, respectively.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.101665
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  • 13
    Digitale Medien
    Digitale Medien
    Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3927-3928 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: By introducing a single-quantum-well active layer and a high-Al-content carrier blocking layer, the output power of an AlGaN-based ultraviolet light-emitting diode has been improved by one order of magnitude. Optical output of 1 mW was achieved at the emission peak wavelength of 341–343 nm. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1377854
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  • 14
    Digitale Medien
    Digitale Medien
    Large and stable field-emission current from heavily Si-doped AlN grown by metalorganic vapor phase epitaxy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2910-2912 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on the electron field emission (FE) from heavily Si-doped AlN grown by metalorganic vapor phase epitaxy. We found that, as the Si-dopant density increases, the threshold electric field decreases and, consequently, the FE current from AlN increases drastically. We show that heavily Si-doped (2.5×1020 cm−3) AlN has a threshold electric field of 34 V/μm, a maximum FE current density of 4.8 mA/cm2, and stable FE current (fluctuation: 3%). © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.126514
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  • 15
    Digitale Medien
    Digitale Medien
    Common-emitter current–voltage characteristics of a pnp GaN bipolar junction transistor (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1225-1227 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We fabricated a pnp GaN bipolar junction transistor and investigated its common-emitter current–voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its doping concentration was estimated to be lower than mid-1017 cm−3. We have obtained a maximum common-emitter current gain of 50 at room temperature for collector current ranging from −10−5 to −10−4 A. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1447593
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  • 16
    Digitale Medien
    Digitale Medien
    Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 711-712 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: By introducing thick bulk GaN as a substrate, we improved the performance of an AlGaN-based ultraviolet (UV) light-emitting diode (LED). The output power exceeds 3 mW at the injection current of 100 mA under a bare-chip geometry. Internal quantum efficiency is estimated as more than 80%, and the peak wavelength is 352 nm. The maximum power exceeds 10 mW at a large current injection of 400 mA, with an operation voltage of less than 6 V. These results indicate that an efficient UV LED is intrinsically possible by the combination of appropriate device design and the nitride substrate. By introducing packaging technology to enhance extraction efficiency, we will have a compact and efficient UV light source in the wide wavelength range of 200–360 nm, similar to conventional longer-wavelength LEDs. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1390485
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  • 17
    Digitale Medien
    Digitale Medien
    High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 380-381 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: InGaN/GaN double heterojunction bipolar transistors have been fabricated using p-type InGaN as a base layer. The structures were grown on SiC substrates by metalorganic vapor phase expitaxy and defined by electron cyclotron resonance plasma etching. The In mole fraction in the base layer and its thickness were 0.06 and 100 nm, respectively. The Mg doping concentration in the base layer was 1×1019 cm−3 corresponding to a hole concentration of 5×1018 cm−3 at room temperature. From their common-emitter current–voltage characteristics, the maximum current gain of 20 was obtained at room temperature. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1387261
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  • 18
    Digitale Medien
    Digitale Medien
    Room-temperature lasing of InGaN multiquantum-well hexagonal microfacet lasers by current injection (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1414-1416 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: InGaN multiquantum-well (MQW) hexagonal microfacet (HMF) lasers have been fabricated by electron cyclotron resonance dry etching of as-grown planar InGaN MQW laser structures followed by metalorganic vapor phase epitaxy regrowth of p-GaN to form mirror facets of the lasers. The mirror facets are smooth and vertical {112¯0} facets of the regrown p-GaN. The HMF lasers lase at 401 nm under pulsed operation at room temperature. There is no significant difference in threshold current density for different cavity lengths of 480 and 770 μm, indicating that the mirror facets act as total reflectors. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1398322
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  • 19
    Digitale Medien
    Digitale Medien
    Selective area metalorganic vapor phase epitaxy of thick crack-free GaN films on trenched SiC substrates (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1261-1263 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Crack-free GaN films up to 11-μm-thick have been grown by using trenched SiC substrates and selective area metalorganic vapor phase epitaxy. These crack-free GaN films have hexagonal shapes and are surrounded by trenches. 97% of the hexagonal GaN films with side lengths of 100 μm and thickness of 11 μm was crack-free. The GaN films do not crack because the lateral propagation of cracks stops at the trenches and strain is relaxed in the small-area hexagonal GaN. This strain relaxation is confirmed by micro-Raman scattering measurements and agrees well with theoretical predictions. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1394725
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  • 20
    Digitale Medien
    Digitale Medien
    Lattice parameters of wurtzite Al1−xSixN ternary alloys (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4351-4353 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Lattice constants and bond lengths of wurtzite Al1−xSixN ternary alloys (0≤x≤0.08) were determined by reciprocal lattice maps around Al1−xSixN (0002) and (11–24) reflections. The measured lattice constants obtained directly from as-grown Al1−xSixN layers were scattered because they include the factor of residual strain. Therefore, the lattice constants in the strain-free case were calculated from the measured lattice constants taking the residual strain into account. We found that the a-axis and c-axis lattice constants of the strain-free Al1−xSixN linearly decreased with the Si content as a0=3.1113−0.1412x (Å) and c0=4.9814−0.2299x (Å). Further, we obtained the bond length as d0=1.86818−0.0862x (Å). The bond length is nearly equal to the interpolation between the Al–N bond and the Si–N bond. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1428768
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