Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 1235-1237
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photoluminescence in ZnSe/GaAs/Al0.4Ga0.6As single quantum well heterostructures is reported for the first time. These structures are grown by migration-enhanced epitaxy, resulting in flat and abrupt ZnSe/GaAs heterointerfaces. The quantum size effect is clearly observed. Photoluminescence intensities of ZnSe/GaAs/Al0.4Ga0.6As single quantum well structures are comparable to those of Al0.4Ga0.6As/GaAs/Al0.4Ga0.6As, indicating a reasonable quality of the ZnSe layer as well as the ZnSe/GaAs heterojunctions. From the GaAs well width dependence of photoluminescence wavelength, the conduction- and valence-band-edge discontinuities are estimated to be 0.03–0.05 eV and 1.21–1.23 eV, respectively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101665
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