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  • 11
    Electronic Resource
    Electronic Resource
    Impurity bands and band tailing in n-type GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2854-2859 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density of states of the valence and conduction bands of n-type GaAs has been calculated for a donor density of 1017 cm−3 at 300 and 20 K. Both the donor-carrier and carrier-carrier interactions have been included. Band tails appear on both bands and the energy gap is narrowed. Calculations were also performed for a donor density of 1015 cm−3 at 300 and 20 K. These results show the formation of an impurity band at 20 K, whereas a band tail exists at 300 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337069
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  • 12
    Electronic Resource
    Electronic Resource
    Models for heavy doping effects in gallium arsenide (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 521-527 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Klauder's self-energy method is used in a self-consistent calculation of the effects due to the interactions between carriers and dopant ions in GaAs at 300 K. The many-body effects due to the interactions among the carriers themselves, exchange, and correlation, are estimated by evaluating expressions similar to those of Abram et al. at 300 K. When densities exceed about 5×1016 cm−3 in n-type GaAs and 1018 cm−3 in p-type GaAs, carrier-dopant ion interactions and carrier-carrier interactions become significant and should be included in calculations of band structure changes and of properties which depend on the density of states such as carrier transport, effective intrinsic carrier concentrations, and coefficients for optical absorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339777
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  • 13
    Electronic Resource
    Electronic Resource
    Methods for accurate determination of emission rate and trap concentration with application to platinum-doped silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 534-540 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A procedure for the analysis of junction capacitance was developed which allows one to extract accurate values of emission rate and trap concentration from isothermal transient capacitance measurements. Experiments to demonstrate the procedure were performed on silicon diodes doped with platinum. The capacitance-ratio method of determining the emission rate was used to remove the nonexponentiality due to large trap concentration from the capacitance transients. Arrhenius plots of scaled emission rate gave activation energies of EC−EA=0.2271±0.0002 eV for the platinum acceptor level in n-type silicon and EA−Ev=0.3215±0.0012 eV for the platinum donor level in p-type silicon. A new method for determining the trap concentration is derived and verified by use of simulations and data. This method involves the subtraction of capacitance values obtained from two transients with the same fill voltage, but different reverse voltages. It is much simpler than methods which require iterative solutions of Poisson's equation and a priori knowledge of the trap energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339779
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  • 14
    Electronic Resource
    Electronic Resource
    Impurity bands and band tailing in moderately doped silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 2048-2053 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density of states of the valence and conduction bands in silicon has been calculated at room temperature for dopant densities near the transition between the existence of a distinct impurity band and its coalescence with the continuum band to form a band tail. The dopant densities for the three cases considered are (1) 1.5×1018 cm−3 acceptors; (2) 6.2×1018 cm−3 acceptors; and (3) 1.2×1019 cm−3 donors compensated by 6.2×1018 cm−3 acceptors. The calculation is based on multiple-scattering theory with the self-energy calculated self-consistently to all orders of the interaction. The results show a small but significant amount of effective band-gap narrowing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336389
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  • 15
    Electronic Resource
    Electronic Resource
    Transverse magnetoresistance: A novel two-terminal method for measuring the carrier density and mobility of a semiconductor layer (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3015-3017 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic-field dependence of the two-terminal magnetoresistance that occurs in rectangularly shaped samples can be used to determine both the free-carrier density and the mobility of a semiconductor layer. An approximate equation for the magnetoresistance was derived for variable length-to-width ratio. This technique was used to determine the electron density and mobility of accumulation layers in n-type Hg0.8Cd0.2Te photoconductive infrared detectors at 6 and 77 K. It should be applicable to a wide variety of fabricated devices and allow significant improvements in processing methods and quality control.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111389
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  • 16
    Electronic Resource
    Electronic Resource
    The effect of electron-hole plasmas on the density of states of silicon and GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4279-4283 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The densities of states of the conduction and valence bands of silicon and GaAs have been calculated at 300 K for the case of an electron-hole plasma, which can occur at high-injection levels in bipolar devices or in bulk material under intense optical excitation. The results show considerable narrowing of the band gap, which needs to be included in the analysis of device measurements or the interpretation of photoluminescence data. Furthermore, the band-gap narrowing that results from dopant ions is reduced by excess carriers because of the reduced free-carrier screening radius.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343971
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