Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 11
    Electronic Resource
    Electronic Resource
    Microstructure of epitaxial YBa2Cu3O7−x thin films grown on LaAlO3 (001) (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2268-2270 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a microstructural investigation of the epitaxial growth of YBa2Cu3O7−x (YBCO) thin films on LaAlO3 (001) substrates using transmission electron microscopy (TEM). Epitaxial films grow with two distinct modes: c epitaxy (YBCO) single crystal with the c axis normal to the surface) and a epitaxy (YBCO) single crystal with the c axis in the interfacial plane), where c epitaxy is the dominant mode grown in all samples 35–200 nm thick. In 35 nm YBCO films annealed at 850 °C, 97±1% of the surface area is covered by c epitaxy with embedded anisotropic a-epitaxial grains. Quantitative analysis reveals the effect of film thickness and annealing temperature on the density, grain sizes, areal coverages, and anisotropic growth of a epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104165
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 12
    Electronic Resource
    Electronic Resource
    Quantum transport in ultrathin CoSi2 epitaxial films (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 452-454 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetotransport measurements have been performed in thin cobalt disilicide films epitaxially grown on Si(111) wafers. Films of thickness between 4.0 and 20.0 nm were studied in order to ascertain the important electron scattering rates. A temperature independent contribution to the phase breaking scattering rate was determined and attributed to spin–spin scattering of the conduction electrons which increases as the film thickness is decreased. The origin of this scattering and its importance to the low-temperature electron transport are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103663
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 13
    Electronic Resource
    Electronic Resource
    High critical current densities in epitaxial YBa2Cu3O7−δ thin films on silicon-on-sapphire (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2432-2434 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of silicon on sapphire (SOS) as a substrate for YBa2Cu3O7−δ allows the growth of thick (∼4000 A(ring)) films without the thermally induced cracking characteristic of epitaxial films on bulk Si substrate. Epitaxy is sustained and reaction is prevented by an intermediate buffer layer of yttria-stabilized (YSZ). The transport critical current density is as high as 4.6×106 A/cm2 at 77 K, and surface resistance measurements at 4.2 K are reported. Microtwin propagation from Si into YSZ is shown not to occur.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104864
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 14
    Electronic Resource
    Electronic Resource
    Thin-film YBa2Cu3O7−x direct current SQUIDs with Josephson junctions made by direct electron beam writing (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2590-2592 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated dc superconducting quantum interference devices (SQUIDs) with loop areas 8 and 64 μm2 made by direct electron beam writing in YBa2Cu3O7−x films with thickness 25 and 50 nm. The SQUIDs have maximum peak-to-peak voltage modulation of about 20 μV, which corresponds to the transfer factor dV/dΦ0∼50–60 μV/Φ0 at 30–40 K. By measuring the mutual inductance of the SQUID signal line as a function of temperature and comparing the data with the numerical calculations and the two-fluid model, we extracted the values of the London penetration depth for YBa2Cu3O7−x thin films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117709
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 15
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of epitaxial spinel ferrite thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 714-716 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown epitaxial spinel ferrite thin films of (Mn,Zn) Fe2O4 and CoFe2O4 on (100) and (110) SrTiO3 and MgAl2O4 buffered by spinel structure buffer layers. High quality spinel ferrite films were grown at 400 °C on buffer layers that were grown at 600 °C and postannealed at 1000 °C. Although (Mn,Zn) Fe2O4 grown directly on SrTiO3 and MgAl2O4 shows mediocre structural and magnetic properties, ferrite films grown on (100) and (110) SrTiO3 and MgAl2O4 buffered with CoCr2O4 exhibit excellent crystallinity and bulk saturation magnetization values, thus indicating the importance of lattice match and structural similarity between the film and the immediately underlying layer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116601
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 16
    Electronic Resource
    Electronic Resource
    Epitaxial yttria-stabilized zirconia on hydrogen-terminated Si by pulsed laser deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1137-1139 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial yttria-stabilized zirconia films were grown on Si (100) and Si (111) by pulsed laser deposition. Rutherford backscattering spectroscopy indicates a high degree of crystalline perfection with a channeling minimum yield of 5.3%. A necessary predeposition process is removal of native silicon oxide from the Si prior to film growth. This is done outside the deposition chamber at 23 °C using a wet-chemical hydrogen-termination procedure. Epitaxial YBa2Cu3O7−δ films have been grown on these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104220
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 17
    Electronic Resource
    Electronic Resource
    High critical currents in strained epitaxial YBa2Cu3O7−δ on Si (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1161-1163 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial YBa2Cu3O7−δ (YBCO) films were grown on Si (100) using an intermediate buffer layer of yttria-stabilized zirconia. Both layers are grown via an entirely in situ process by pulsed laser deposition. All films consist of c-axis oriented grains as measured by x-ray diffraction. Strain results from the large difference in thermal expansion coefficients between Si and YBCO. Thin (〈500 A(ring)) YBCO films are unrelaxed and under tensile strain with a distorted unit cell. Rutherford backscattering spectroscopy indicates a high degree of crystalline perfection with a channeling minimum yield for Ba as low as 12%. The normal-state resistivity is 280 μΩ cm at 300 K; the critical temperature Tc (R=0) is 86–88 K with a transition width (ΔTc) of 1 K. Critical current densities of 2×107 A/cm2 at 4.2 K and 2.2×106 A/cm2 at 77 K have been achieved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104225
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 18
    Electronic Resource
    Electronic Resource
    Electrical and structural characterization of ultrathin epitaxial CoSi2 on Si(111) (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1895-1897 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication of epitaxial CoSi2 layers on Si(111) as thin as 1 nm. The crystalline lattice of these layers is coherent with the Si lattice, and the silicide is electrically continuous. There are pronounced structural differences between films which are less than 3 nm thick and those which are thicker. The resistivity of the layers increases sharply with decreasing thickness. This is the first report of the growth of coherent, electrically continuous CoSi2 layers on Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98504
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 19
    Electronic Resource
    Electronic Resource
    Dispersion of elastic waves in supported CaF2 films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3407-3410 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The velocities of the principal and several higher-order elastic modes localized in CaF2 films grown epitaxially on Si(111) have been measured using Brillouin scattering. The effective elastic constants of the epilayers are evaluated from a fit to the mode dispersion. With decreasing film thicknesses from about 1500 A(ring) reductions from the bulk elastic constants are found. Thicker films are well characterized by bulk parameters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342657
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 20
    Electronic Resource
    Electronic Resource
    Very large magnetoresistance in perovskite-like La-Ca-Mn-O thin films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3045-3047 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Colossal magnetoresistance with more than a thousandfold change in resistivity (ΔR/RH=127 000% at 77 K, H=6 T) has been obtained in epitaxially grown La-Ca-Mn-O thin films. This magnetoresistance value is about three orders of magnitude higher than is typically seen in the giant-magnetoresistance-type metallic, superlattice films. The temperature of peak magnetoresistance is located in the region of metallic resistivity behavior. As the magnetoresistance peak occurs not at the temperature of magnetic transition but at a temperature where the magnetization is still substantial, the spin-disorder scattering is not likely to be the main mechanism in these highly magnetoresistive films. The peak can be shifted to near room temperature by adjusting processing parameters. Near-room-temperature ΔR/RH values of ∼1300% at 260 K and ∼400% at 280 K have been observed. The presence of grain boundaries appears to be very detrimental to achieving large magnetoresistance in the lanthanum manganite compounds. The fact that the electrical resistivity of a material can be manipulated by magnetic field to change by orders of magnitude could be useful for various device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111372
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...