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  • 11
    Electronic Resource
    Electronic Resource
    Collision-induced dissociation of Cr+n (n=2–21) with Xe: Bond energies, dissociation pathways, and structures (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 6506-6516 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The kinetic energy dependence of the collision-induced dissociation (CID) of Crn+ (n=2–21) with xenon is studied by using a guided ion beam mass spectrometer. Examination of the general dissociation behavior over a broad collision energy range shows that chromium cluster ions dissociate primarily by sequential atom loss with a few exceptions, most notably Cr5+. Bond energies of chromium cluster ions D(Crn−1+–Cr) are determined from measurements of the CID thresholds. The cluster size dependence of chromium cluster bond energies shows that odd-sized clusters are more stable than even clusters for smaller clusters (n≤9) and local maxima at n=13, 14, and 20 for larger clusters. The even–odd alternation in the stability of small chromium clusters suggests that these cluster cations are bound mainly by the 4s electrons. The pattern of stability for the larger clusters, in particular, the observation that the 14- and 20-atom clusters are relatively stable, is consistent with clusters built around a dimer core.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465842
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  • 12
    Electronic Resource
    Electronic Resource
    Collision-induced dissociation of Vn+ (n=2–20) with Xe: Bond energies, dissociation pathways, and structures (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 6613-6623 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The kinetic energy dependence of the collision-induced dissociation (CID) of Vn+ (n=2–20) with xenon is studied by using a guided ion beam mass spectrometer. Examination of the general dissociation behavior over a broad collision energy range shows that vanadium cluster ions dissociate primarily by sequential atom loss, although dimer loss is also observed for several clusters, notably V4+. Bond energies of vanadium cluster ions, D(Vn−1+–V), are determined from measurements of the CID thresholds. Bond energies for neutral vanadium clusters are derived by combining these ionic bond energies with literature ionization energies for Vn. The bond energies of cationic and neutral vanadium clusters are very similar and show an even–odd oscillation below n=11 with even-sized clusters being more stable. For larger clusters, prominent stable clusters occur at n=13 and 15. These patterns in stability are found to correlate well with the reactivities of the neutral and cationic clusters, such that stable clusters are the least reactive. Possible electronic and geometric structures consistent with these stability and reactivity patterns are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465853
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  • 13
    Electronic Resource
    Electronic Resource
    Alloying of Co ultrathin films on Pt(111) with Ag buffer layers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 705-709 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure at the interfaces of Co/Ag/Pt(111) was studied by low-energy electron diffraction, ultraviolet photoelectron spectroscopy, Auger electron spectroscopy, and depth profiling. An atomic exchange occurs between Co and Ag before the formation of a Co–Pt alloy. Ag atoms start moving to the top at 425 K when the coverage of Co is one monolayer. The temperature of the complete exchange between Ag atoms and Co atoms is dependent on the thickness of the Ag buffer layer. The Co–Pt alloy develops after the atomic exchange is complete. The especially small surface free energy of Ag and large strain energy in this system are proposed as the driving force for the exchange. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373725
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  • 14
    Electronic Resource
    Electronic Resource
    Dose distribution of synchrotron x-ray penetrating materials of low atomic numbers (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2163-2166 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This article describes the distribution of absorption doses and spectrum shift of synchrotron x-ray traversing materials. The analytical approximations of the universal function of the synchrotron power spectrum was found. From this analytical approach, the penetration doses and the high-pass window effect were estimated for materials of low atomic numbers. The result can be generally applied to the deep x-ray lithography. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148067
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  • 15
    Electronic Resource
    Electronic Resource
    AF-DX 116: A Cardioselective Muscarinic Antagonist (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Cardiovascular drug reviews 9 (1991), S. 0 
    Details
    ISSN: 1527-3466
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1527-3466.1991.tb00541.x
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  • 16
    Electronic Resource
    Electronic Resource
    Elastic and anelastic properties of chemical vapor deposited epitaxial 3C-SiC (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5611-5615 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemical vapor deposited 3C-SiC films were micromachined into free standing cantilevers and their anelastic and elastic properties were determined by a vibrating reed technique. Despite a high density of defects, epitaxial 3C-SiC exhibits extremely high mechanical Q which is essential for resonator sensors and actuators. An anelastic relaxation peak was found with an associated activation energy of 0.94 eV. Doping caused splitting of this peak. The mechanism of the mechanical relaxation peak is discussed in relation to defect movement under stress. Young's modulus of epitaxial undoped 3C-SiC was found to be 694 GPa, p-doping reduced it to 474 Gpa. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359551
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  • 17
    Electronic Resource
    Electronic Resource
    Thermal expansion of Ni/Cu multilayers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4567-4570 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The coefficient of thermal expansion of electrodeposited Ni/Cu multilayers was obtained by measuring the evolution of membrane resonances and hence the tension as a function of temperature. The apparent thermal expansion coefficient of the multilayer membranes increases as the interface density of the multilayers increases. This increase is analyzed in terms of stress relaxation resulting from sliding of nonperfectly bonded interfaces. The analysis permits the normalization of all thermal expansion data of the Cu/Ni multilayers with layer thicknesses ranging from 20 to 800 nm but not of the thinnest layers, 2 nm thick. The results are consistent with the idea that interfacial adhesion improves as the layer thickness becomes very small, favoring epitaxial growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357289
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  • 18
    Electronic Resource
    Electronic Resource
    Stresses in chemical vapor deposited epitaxial 3C-SiC membranes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1280-1283 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The internal stresses in chemical-vapor-deposited 3C-SiC films were studied by a vibrating membrane technique. The differential thermal expansivity of 3C-SiC films was investigated by the change of the internal stress as a function of temperature. It was found that the internal stress of the films is dominated by thermal stresses and its magnitude depends both on doping and the film thickness. While p doping substantially increases the stress, increasing the film thickness reduces the stress of the SiC layer. The thermal expansivity of the SiC layer shows a lower value which is significantly less than that of bulk 3C-SiC and tends to approach the expansivity of the Si substrate. It is proposed that the stress dependence of the SiC films on doping and film thickness is the result of the film morphology which is heavily faulted for very thin films and more perfect as the film thickness increases. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359579
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  • 19
    Electronic Resource
    Electronic Resource
    Growth of highly oriented tin oxide thin films by laser evaporation deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1879-1881 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conducting and transparent thin films of tin oxide were prepared by the laser evaporation of an undoped powder-pressed polycrystalline tin oxide target onto unheated substrates. After characterizing these films, the results reveal that the films are highly oriented and with a grain size ∼0.2 μm. The nearly stoichiometric deposition of tin oxide films with deposition rates exceeding 24 A(ring) per pulse was obtained by this method. The lowest resistivity obtained is 3.0×10−3 Ω cm. The visible transmittance (between 4000 and 7000 A(ring)) is above 75%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103998
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  • 20
    Electronic Resource
    Electronic Resource
    Explanation of low-frequency relative intensity noise in semiconductor lasers (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 849-851 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the first time, the enhanced low-frequency relative intensity noise characteristics of semiconductor lasers is explained. It is shown, by multimode rate equation analysis, that the enhanced low-frequency noise is caused by coupling between longitudinal modes which can renormalize the resonance frequency of the individual modes to very low values. It is further shown that a single-mode laser will also exhibit enhanced low-frequency noise unless the side-mode suppression is high.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103385
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